SWRS232D February   2019  – February 2021 CC2652RB

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Functional Block Diagram
  5. 5 Revision History
  6. 6 Device Comparison
  7. 7 Terminal Configuration and Functions
    1. 7.1 Pin Diagram – RGZ Package (Top View)
    2. 7.2 Signal Descriptions – RGZ Package
    3. 7.3 Connections for Unused Pins and Modules
  8. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Power Supply and Modules
    5. 8.5  Power Consumption - Power Modes
    6. 8.6  Power Consumption - Radio Modes
    7. 8.7  Nonvolatile (Flash) Memory Characteristics
    8. 8.8  Thermal Resistance Characteristics
    9. 8.9  RF Frequency Bands
    10. 8.10 Bluetooth Low Energy - Receive (RX)
    11. 8.11 Bluetooth Low Energy - Transmit (TX)
    12. 8.12 Zigbee and Thread - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - TX
    13. 8.13 Zigbee and Thread - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - RX
    14. 8.14 Timing and Switching Characteristics
      1. 8.14.1 Reset Timing
      2. 8.14.2 Wakeup Timing
      3. 8.14.3 Clock Specifications
        1. 8.14.3.1 48 MHz Bulk Acoustic Wave (BAW) Oscillator
        2. 8.14.3.2 48 MHz Crystal Oscillator (XOSC_HF)
        3. 8.14.3.3 48 MHz RC Oscillator (RCOSC_HF)
        4. 8.14.3.4 2 MHz RC Oscillator (RCOSC_MF)
        5. 8.14.3.5 32.768 kHz Crystal Oscillator (XOSC_LF)
        6. 8.14.3.6 32 kHz RC Oscillator (RCOSC_LF)
      4. 8.14.4 Synchronous Serial Interface (SSI) Characteristics
        1. 8.14.4.1 Synchronous Serial Interface (SSI) Characteristics
        2.       37
      5. 8.14.5 UART
        1. 8.14.5.1 UART Characteristics
    15. 8.15 Peripheral Characteristics
      1. 8.15.1 ADC
        1. 8.15.1.1 Analog-to-Digital Converter (ADC) Characteristics
      2. 8.15.2 DAC
        1. 8.15.2.1 Digital-to-Analog Converter (DAC) Characteristics
      3. 8.15.3 Temperature and Battery Monitor
        1. 8.15.3.1 Temperature Sensor
        2. 8.15.3.2 Battery Monitor
      4. 8.15.4 Comparators
        1. 8.15.4.1 Low-Power Clocked Comparator
        2. 8.15.4.2 Continuous Time Comparator
      5. 8.15.5 Current Source
        1. 8.15.5.1 Programmable Current Source
      6. 8.15.6 GPIO
        1. 8.15.6.1 GPIO DC Characteristics
    16. 8.16 Typical Characteristics
      1. 8.16.1 MCU Current
      2. 8.16.2 RX Current
      3. 8.16.3 TX Current
      4. 8.16.4 RX Performance
      5. 8.16.5 TX Performance
      6. 8.16.6 ADC Performance
  9. 9 Detailed Description
    1. 9.1  Overview
    2. 9.2  System CPU
    3. 9.3  Radio (RF Core)
      1. 9.3.1 Bluetooth 5.2 Low Energy
      2. 9.3.2 802.15.4 (Thread, Zigbee, 6LoWPAN)
    4. 9.4  Memory
    5. 9.5  Sensor Controller
    6. 9.6  Cryptography
    7. 9.7  Timers
    8. 9.8  Serial Peripherals and I/O
    9. 9.9  Battery and Temperature Monitor
    10. 9.10 µDMA
    11. 9.11 Debug
    12. 9.12 Power Management
    13. 9.13 Clock Systems
    14. 9.14 Network Processor
  10. 10Application, Implementation, and Layout
    1. 10.1 Reference Designs
  11. 11Device and Documentation Support
    1. 11.1 Tools and Software
      1. 11.1.1 SimpleLink™ Microcontroller Platform
    2. 11.2 Documentation Support
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Packaging Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RGZ|48
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.14.3.2 48 MHz Crystal Oscillator (XOSC_HF)

Measured on a Texas Instruments reference design with Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted.(1)
PARAMETER MIN TYP MAX UNIT
Crystal frequency 48 MHz
ESR Equivalent series resistance
6 pF < CL ≤ 9 pF		 20 60 Ω
ESR Equivalent series resistance
5 pF < CL ≤  6 pF		 80 Ω
LM Motional inductance, relates to the load capacitance that is used for the crystal (CL in Farads)(5) < 3 × 10–25 / CL 2 H
CL Crystal load capacitance(4) 5 7(3) 9 pF
Start-up time(2) 200 µs
(1) Probing or otherwise stopping the crystal while the DC/DC converter is enabled may cause permanent damage to the device.
(2) Start-up time using the TI-provided power driver. Start-up time may increase if driver is not used.
(3) On-chip default connected capacitance including reference design parasitic capacitance. Connected internal capacitance is changed through software in the Customer Configuration section (CCFG).
(4) Adjustable load capacitance is integrated into the device.
(5) The crystal manufacturer's specification must satisfy this requirement for proper operation.