SWRS262B February   2021  – September 2022 CC2652RSIP

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Functional Block Diagram
  5. Revision History
  6. Device Comparison
  7. Terminal Configuration and Functions
    1. 7.1 Pin Diagram
    2. 7.2 Signal Descriptions – SIP Package
    3. 7.3 Connections for Unused Pins and Modules
  8. Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Power Supply and Modules
    5. 8.5  Power Consumption - Power Modes
    6. 8.6  Power Consumption - Radio Modes
    7. 8.7  Nonvolatile (Flash) Memory Characteristics
    8. 8.8  Thermal Resistance Characteristics
    9. 8.9  RF Frequency Bands
    10. 8.10 Bluetooth Low Energy - Receive (RX)
    11. 8.11 Bluetooth Low Energy - Transmit (TX)
    12. 8.12 Zigbee and Thread - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - RX
    13. 8.13 Zigbee and Thread - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - TX
    14. 8.14 Timing and Switching Characteristics
      1. 8.14.1 Reset Timing
      2. 8.14.2 Wakeup Timing
      3. 8.14.3 Clock Specifications
        1. 8.14.3.1 48 MHz Crystal Oscillator (XOSC_HF)
        2. 8.14.3.2 48 MHz RC Oscillator (RCOSC_HF)
        3. 8.14.3.3 2 MHz RC Oscillator (RCOSC_MF)
        4. 8.14.3.4 32.768 kHz Crystal Oscillator (XOSC_LF)
        5. 8.14.3.5 32 kHz RC Oscillator (RCOSC_LF)
      4. 8.14.4 Synchronous Serial Interface (SSI) Characteristics
        1. 8.14.4.1 Synchronous Serial Interface (SSI) Characteristics
        2.       36
      5. 8.14.5 UART
        1.       38
    15. 8.15 Peripheral Characteristics
      1. 8.15.1 ADC
        1.       Analog-to-Digital Converter (ADC) Characteristics
      2. 8.15.2 DAC
        1. 8.15.2.1 Digital-to-Analog Converter (DAC) Characteristics
      3. 8.15.3 Temperature and Battery Monitor
        1. 8.15.3.1 Temperature Sensor
        2. 8.15.3.2 Battery Monitor
      4. 8.15.4 Comparators
        1. 8.15.4.1 Low-Power Clocked Comparator
        2. 8.15.4.2 Continuous Time Comparator
      5. 8.15.5 Current Source
        1. 8.15.5.1 Programmable Current Source
      6. 8.15.6 GPIO
        1. 8.15.6.1 GPIO DC Characteristics
    16. 8.16 Typical Characteristics
      1. 8.16.1 MCU Current
      2. 8.16.2 RX Current
      3. 8.16.3 TX Current
      4. 8.16.4 RX Performance
      5. 8.16.5 TX Performance
      6. 8.16.6 ADC Performance
  9. Detailed Description
    1. 9.1  Overview
    2. 9.2  System CPU
    3. 9.3  Radio (RF Core)
      1. 9.3.1 Bluetooth 5.2 Low Energy
      2. 9.3.2 802.15.4 (Thread, Zigbee, 6LoWPAN)
    4. 9.4  Memory
    5. 9.5  Sensor Controller
    6. 9.6  Cryptography
    7. 9.7  Timers
    8. 9.8  Serial Peripherals and I/O
    9. 9.9  Battery and Temperature Monitor
    10. 9.10 µDMA
    11. 9.11 Debug
    12. 9.12 Power Management
    13. 9.13 Clock Systems
    14. 9.14 Network Processor
    15. 9.15 Device Certification and Qualification
      1. 9.15.1 FCC Certification and Statement
      2. 9.15.2 IC/ISED Certification and Statement
      3. 9.15.3 ETSI/CE Certification
      4. 9.15.4 UK Certification
    16. 9.16 Module Markings
    17. 9.17 End Product Labeling
    18. 9.18 Manual Information to the End User
  10. 10Application, Implementation, and Layout
    1. 10.1 Application Information
      1. 10.1.1 Typical Application Circuit
    2. 10.2 Device Connection and Layout Fundamentals
      1. 10.2.1 Reset
      2. 10.2.2 Unused Pins
    3. 10.3 PCB Layout Guidelines
      1. 10.3.1 General Layout Recommendations
      2. 10.3.2 RF Layout Recommendations
        1. 10.3.2.1 Antenna Placement and Routing
        2. 10.3.2.2 Transmission Line Considerations
    4. 10.4 Reference Designs
    5. 10.5 Junction Temperature Calculation
  11. 11Environmental Requirements and SMT Specifications
    1. 11.1 PCB Bending
    2. 11.2 Handling Environment
      1. 11.2.1 Terminals
      2. 11.2.2 Falling
    3. 11.3 Storage Condition
      1. 11.3.1 Moisture Barrier Bag Before Opened
      2. 11.3.2 Moisture Barrier Bag Open
    4. 11.4 PCB Assembly Guide
      1. 11.4.1 PCB Land Pattern & Thermal Vias
      2. 11.4.2 SMT Assembly Recommendations
      3. 11.4.3 PCB Surface Finish Requirements
      4. 11.4.4 Solder Stencil
      5. 11.4.5 Package Placement
      6. 11.4.6 Solder Joint Inspection
      7. 11.4.7 Rework and Replacement
      8. 11.4.8 Solder Joint Voiding
    5. 11.5 Baking Conditions
    6. 11.6 Soldering and Reflow Condition
  12. 12Device and Documentation Support
    1. 12.1 Device Nomenclature
    2. 12.2 Tools and Software
      1. 12.2.1 SimpleLink™ Microcontroller Platform
    3. 12.3 Documentation Support
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Packaging Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Junction Temperature Calculation

This section shows the different techniques for calculating the junction temperature under various operating conditions. For more details, see Semiconductor and IC Package Thermal Metrics.

There are three recommended ways to derive the junction temperature from other measured temperatures:

  1. From package temperature:
    Equation 1. T J = ψ JT × P + T case
  2. From board temperature:
    Equation 2. T J = ψ JB × P + T board
  3. From ambient temperature:
    Equation 3. T J = R θJA × P + T A

P is the power dissipated from the device and can be calculated by multiplying current consumption with supply voltage. Thermal resistance coefficients are found in Section 8.8.

Example:

Using Equation 3, the temperature difference between ambient temperature and junction temperature is calculated. In this example, we assume a simple use case where the radio is transmitting continuously at 0 dBm output power. Let us assume the ambient temperature is 80 °C and the supply voltage is 3 V. To calculate P, we need to look up the current consumption for Tx at 80 °C in Typical Characteristics. From the plot, we see that the current consumption is 8.25 mA. This means that P is 8.25 mA × 3 V = 24.75 mW.

The junction temperature is then calculated as:

Equation 4. T J = 23.4 ° C W × 23.4 m W + T A = 0.6 ° C + T A

As can be seen from the example, the junction temperature is 0.6 °C higher than the ambient temperature when running continuous Tx at 85 °C and, thus, well within the recommended operating conditions.

For various application use cases current consumption for other modules may have to be added to calculate the appropriate power dissipation. For example, the MCU may be running simultaneously as the radio, peripheral modules may be enabled, etc. Typically, the easiest way to find the peak current consumption, and thus the peak power dissipation in the device, is to measure as described in Measuring CC13xx and CC26xx current consumption.