SWRS304A October   2024  – December 2024 CC2745P10-Q1 , CC2745R10-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
  7. 6 Pin Configuration and Functions
    1. 6.1 Pin Diagram—RHA package
    2. 6.2 Signal Descriptions—RHA Package
    3. 6.3 Connections for Unused Pins and Modules—RHA Package
    4. 6.4 RHA Peripheral Pin Mapping
    5. 6.5 RHA Peripheral Signal Descriptions
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD and MSL Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  DC/DC
    5. 7.5  GLDO
    6. 7.6  Power Supply and Modules
    7. 7.7  Battery Monitor
    8. 7.8  BATMON Temperature Sensor
    9. 7.9  Power Consumption—Power Modes
    10. 7.10 Power Consumption—Radio Modes
    11. 7.11 Nonvolatile (Flash) Memory Characteristics
    12. 7.12 Thermal Resistance Characteristics
    13. 7.13 RF Frequency Bands
    14. 7.14 Bluetooth Low Energy—Receive (RX)
    15. 7.15 Bluetooth Low Energy—Transmit (TX)
    16. 7.16 Bluetooth Channel Sounding
    17. 7.17 2.4GHz RX/TX CW
    18. 7.18 Timing and Switching Characteristics
      1. 7.18.1 Reset Timing
      2. 7.18.2 Wakeup Timing
      3. 7.18.3 Clock Specifications
        1. 7.18.3.1 48 MHz Crystal Oscillator (HFXT)
        2. 7.18.3.2 96 MHz RC Oscillator (HFOSC)
        3. 7.18.3.3 80/90/98 MHz RC Oscillator (AFOSC)
        4. 7.18.3.4 32 kHz Crystal Oscillator (LFXT)
        5. 7.18.3.5 32 kHz RC Oscillator (LFOSC)
    19. 7.19 Peripheral Characteristics
      1. 7.19.1 UART
        1. 7.19.1.1 UART Characteristics
      2. 7.19.2 SPI
        1. 7.19.2.1 SPI Characteristics
        2. 7.19.2.2 SPI Controller Mode
        3. 7.19.2.3 SPI Timing Diagrams - Controller Mode
        4. 7.19.2.4 SPI Peripheral Mode
        5. 7.19.2.5 SPI Timing Diagrams - Peripheral Mode
      3. 7.19.3 I2C
        1. 7.19.3.1 I2C Characteristics
        2. 7.19.3.2 I2C Timing Diagram
      4. 7.19.4 I2S
        1. 7.19.4.1 I2S Controller Mode
        2. 7.19.4.2 I2S Peripheral Mode
      5. 7.19.5 CAN-FD
        1. 7.19.5.1 CAN-FD Characteristics
      6. 7.19.6 GPIO
        1. 7.19.6.1 GPIO DC Characteristics
      7. 7.19.7 ADC
        1. 7.19.7.1 Analog-to-Digital Converter (ADC) Characteristics
      8. 7.19.8 Comparators
        1. 7.19.8.1 Low Power Comparator
      9. 7.19.9 Voltage Glitch Monitor
    20. 7.20 Typical Characteristics
      1. 7.20.1 MCU Current
      2. 7.20.2 RX Current
      3. 7.20.3 TX Current
      4. 7.20.4 RX Performance
      5. 7.20.5 TX Performance
      6. 7.20.6 ADC Performance
  9. 8 Detailed Description
    1. 8.1  Overview
    2. 8.2  System CPU
    3. 8.3  Radio (RF Core)
      1. 8.3.1 Bluetooth Low Energy
    4. 8.4  Memory
    5. 8.5  Hardware Security Module (HSM)
    6. 8.6  Cryptography
    7. 8.7  Timers
    8. 8.8  Algorithm Processing Unit (APU)
    9. 8.9  Serial Peripherals and I/O
    10. 8.10 Battery and Temperature Monitor
    11. 8.11 Voltage Glitch Monitor (VGM)
    12. 8.12 µDMA
    13. 8.13 Debug
    14. 8.14 Power Management
    15. 8.15 Clock Systems
    16. 8.16 Network Processor
    17. 8.17 Integrated BALUN, High Power PA (Power Amplifier)
  10. 9 Application, Implementation, and Layout
    1. 9.1 Reference Designs
    2. 9.2 Junction Temperature Calculation
  11. 10Device and Documentation Support
    1. 10.1 Device Nomenclature
    2. 10.2 Tools and Software
      1. 10.2.1 SimpleLink™ Microcontroller Platform
      2. 10.2.2 Software License and Notice
    3. 10.3 Documentation Support
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.11 Nonvolatile (Flash) Memory Characteristics

Over operating free-air temperature range and VDDS = 3.0V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Flash sector size 2 KB
Supported flash erase cycles before failure, full bank(1)(5) 30 k Cycles
Supported flash erase cycles before failure, single sector(2) 60 k Cycles
Maximum number of write operations per row before sector erase(3) 83 Write Operations
Flash retention 105°C 11.4 Years
Flash retention 125°C 10 Years
Flash sector erase current (6) 5.8 mA
Flash sector erase time(4) 0 erase cycles 2.2 ms
Flash write current (6) full sector at a time 6.6 mA
Flash write time(4) full sector (2KB) at a time, 0 erase cycles 8 ms
(1) A full bank erase is counted as a single erase cycle on each sector.
(2) Up to 16 customer-designated sectors can be individually erased an additional 30k times beyond the baseline bank limitation of 30k cycles
(3) Each wordline is 2048 bits (or 256 bytes) wide. This limitation corresponds to sequential memory writes of 4 (3.1) bytes minimum per write over a whole wordline. If additional writes to the same wordline are required, a sector erase is required once the maximum number of write operations per row is reached.
(4) This number is dependent on Flash aging and increases over time and erase cycles.
(5) Aborting flash during erase or program modes is not a safe operation.
(6) Current consumption when device is performing erase or write operations to a flash sector. DC/DC enabled (ipeak = 0). All peripherals disabled