SWAS035C September   2016  – May 2021 CC3220R , CC3220S , CC3220SF

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Functional Block Diagrams
  5. 5 Revision History
  6. 6 Device Comparison
    1. 6.1 Related Products
  7. 7 Terminal Configuration and Functions
    1. 7.1 Pin Diagram
    2. 7.2 Pin Attributes and Pin Multiplexing
      1. 7.2.1 Pin Descriptions
    3. 7.3 Signal Descriptions
      1. 7.3.1 Signal Descriptions
    4. 7.4 Pin Multiplexing
    5. 7.5 Drive Strength and Reset States for Analog and Digital Multiplexed Pins
    6. 7.6 Pad State After Application of Power to Chip But Before Reset Release
    7. 7.7 Connections for Unused Pins
  8. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Power-On Hours (POH)
    4. 8.4  Recommended Operating Conditions
    5. 8.5  Current Consumption Summary (CC3220R, CC3220S)
    6. 8.6  Current Consumption Summary (CC3220SF)
    7. 8.7  TX Power and IBAT versus TX Power Level Settings
    8. 8.8  Brownout and Blackout Conditions
    9. 8.9  Electrical Characteristics (3.3 V, 25°C)
    10. 8.10 WLAN Receiver Characteristics
    11. 8.11 WLAN Transmitter Characteristics
    12. 8.12 WLAN Filter Requirements
      1. 8.12.1 WLAN Filter Requirements
    13. 8.13 Thermal Resistance Characteristics
      1. 8.13.1 Thermal Resistance Characteristics for RGK Package
    14. 8.14 Timing and Switching Characteristics
      1. 8.14.1 Power Supply Sequencing
      2. 8.14.2 Device Reset
      3. 8.14.3 Reset Timing
        1. 8.14.3.1 nRESET (32-kHz Crystal)
        2. 8.14.3.2 First-Time Power-Up and Reset Removal Timing Requirements (32-kHz Crystal)
        3. 8.14.3.3 nRESET (External 32-kHz)
          1. 8.14.3.3.1 First-Time Power-Up and Reset Removal Timing Requirements (External 32-kHz)
      4. 8.14.4 Wakeup From HIBERNATE Mode
      5. 8.14.5 Clock Specifications
        1. 8.14.5.1 Slow Clock Using Internal Oscillator
          1. 8.14.5.1.1 RTC Crystal Requirements
        2. 8.14.5.2 Slow Clock Using an External Clock
          1. 8.14.5.2.1 External RTC Digital Clock Requirements
        3. 8.14.5.3 Fast Clock (Fref) Using an External Crystal
          1. 8.14.5.3.1 WLAN Fast-Clock Crystal Requirements
        4. 8.14.5.4 Fast Clock (Fref) Using an External Oscillator
          1. 8.14.5.4.1 External Fref Clock Requirements (–40°C to +85°C)
      6. 8.14.6 Peripherals Timing
        1. 8.14.6.1  SPI
          1. 8.14.6.1.1 SPI Master
            1. 8.14.6.1.1.1 SPI Master Timing Parameters
          2. 8.14.6.1.2 SPI Slave
            1. 8.14.6.1.2.1 SPI Slave Timing Parameters
        2. 8.14.6.2  I2S
          1. 8.14.6.2.1 I2S Transmit Mode
            1. 8.14.6.2.1.1 I2S Transmit Mode Timing Parameters
          2. 8.14.6.2.2 I2S Receive Mode
            1. 8.14.6.2.2.1 I2S Receive Mode Timing Parameters
        3. 8.14.6.3  GPIOs
          1. 8.14.6.3.1 GPIO Output Transition Time Parameters (Vsupply = 3.3 V)
            1. 8.14.6.3.1.1 GPIO Output Transition Times (Vsupply = 3.3 V) (1) (1)
          2. 8.14.6.3.2 GPIO Output Transition Time Parameters (Vsupply = 1.85 V)
            1. 8.14.6.3.2.1 GPIO Output Transition Times (Vsupply = 1.85 V) (1) (1)
          3. 8.14.6.3.3 GPIO Input Transition Time Parameters
            1. 8.14.6.3.3.1 GPIO Input Transition Time Parameters'
        4. 8.14.6.4  I2C
          1. 8.14.6.4.1 I2C Timing Parameters (1)
        5. 8.14.6.5  IEEE 1149.1 JTAG
          1. 8.14.6.5.1 JTAG Timing Parameters
        6. 8.14.6.6  ADC
          1. 8.14.6.6.1 ADC Electrical Specifications
        7. 8.14.6.7  Camera Parallel Port
          1. 8.14.6.7.1 Camera Parallel Port Timing Parameters
        8. 8.14.6.8  UART
        9. 8.14.6.9  SD Host
        10. 8.14.6.10 Timers
  9. 9 Detailed Description
    1. 9.1 Arm® Cortex®-M4 Processor Core Subsystem
    2. 9.2 Wi-Fi Network Processor Subsystem
      1. 9.2.1 WLAN
      2. 9.2.2 Network Stack
    3. 9.3 Security
    4. 9.4 Power-Management Subsystem
      1. 9.4.1 VBAT Wide-Voltage Connection
      2. 9.4.2 Preregulated 1.85-V Connection
    5. 9.5 Low-Power Operating Mode
    6. 9.6 Memory
      1. 9.6.1 External Memory Requirements
      2. 9.6.2 Internal Memory
        1. 9.6.2.1 SRAM
        2. 9.6.2.2 ROM
        3. 9.6.2.3 Flash Memory
        4. 9.6.2.4 Memory Map
    7. 9.7 Restoring Factory Default Configuration
    8. 9.8 Boot Modes
      1. 9.8.1 Boot Mode List
  10. 10Applications, Implementation, and Layout
    1. 10.1 Application Information
      1. 10.1.1 Typical Application —CC3220x Wide-Voltage Mode
      2. 10.1.2 Typical Application Schematic—CC3220x Preregulated, 1.85-V Mode
    2. 10.2 PCB Layout Guidelines
      1. 10.2.1 General PCB Guidelines
      2. 10.2.2 Power Layout and Routing
        1. 10.2.2.1 Design Considerations
      3. 10.2.3 Clock Interfaces
      4. 10.2.4 Digital Input and Output
      5. 10.2.5 RF Interface
  11. 11Device and Documentation Support
    1. 11.1 Development Tools and Software
    2. 11.2 Firmware Updates
    3. 11.3 Device Nomenclature
    4. 11.4 Documentation Support
    5. 11.5 Support Resources
    6. 11.6 Trademarks
    7. 11.7 Electrostatic Discharge Caution
    8. 11.8 Export Control Notice
    9. 11.9 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Packaging Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.6 Current Consumption Summary (CC3220SF)

TA = 25°C, VBAT = 3.6 V
PARAMETERTEST CONDITIONS(1)(5)MINTYPMAXUNIT
MCU ACTIVENWP ACTIVETX1 DSSSTX power level = maximum286mA
TX power level = maximum – 4202
6 OFDMTX power level = maximum255
TX power level = maximum – 4192
54 OFDMTX power level = maximum232
TX power level = maximum – 4174
RX1 DSSS74
54 OFDM74
NWP idle connected(3)25.2
MCU SLEEPNWP ACTIVETX1 DSSSTX power level = maximum282mA
TX power level = maximum – 4198
6 OFDMTX power level = maximum251
TX power level = maximum – 4188
54 OFDMTX power level = maximum228
TX power level = maximum – 4170
RX1 DSSS70
54 OFDM70
NWP idle connected(3)21.2
MCU LPDSNWP activeTX1 DSSSTX power level = 0266mA
TX power level = 4184
6 OFDMTX power level = 0242
TX power level = 4176
54 OFDMTX power level = 0217
TX power level = 4154
RX1 DSSS53
54 OFDM53
NWP LPDS(2)120 µA at 64KB
135 µA at 256KB		135µA
NWP idle connected(3)710
MCU SHUTDOWNMCU shutdown1
MCU HIBERNATEMCU hibernate4.5
Peak calibration current(4)VBAT = 3.6 V420mA
VBAT = 3.3 V450
VBAT = 2.1 V670
VBAT = 1.85 V700
(1) TX power level = 0 implies maximum power (see Figure 8-1, Figure 8-2, and Figure 8-3). TX power level = 4 implies output power backed off approximately 4 dB.
(2) LPDS current does not include the external serial flash. The LPDS number of reported is with retention of 256KB of MCU SRAM. The CC3220x device can be configured to retain 0KB, 64KB, 128KB, 192KB, or 256KB of SRAM in LPDS. Each 64-KB block of MCU retained SRAM increases LPDS current by 4 µA.
(3) DTIM = 1
(4) The complete calibration can take up to 17 mJ of energy from the battery over a period of 24 ms. Calibration is performed sparingly, typically when coming out of HIBERNATE and only if temperature has changed by more than 20°C. The calibration event can be controlled by a configuration file in the serial Flash..