SWRS243B February   2020  – May 2021 CC3235MODAS , CC3235MODASF , CC3235MODS , CC3235MODSF

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Functional Block Diagrams
  5. 5 Revision History
  6. 6 Device Comparison
    1. 6.1 Related Products
  7. 7 Terminal Configuration and Functions
    1. 7.1 CC3235MODx and CC3235MODAx Pin Diagram
    2. 7.2 Pin Attributes and Pin Multiplexing
      1. 7.2.1 Module Pin Descriptions
    3. 7.3 Signal Descriptions
    4. 7.4 Drive Strength and Reset States for Analog-Digital Multiplexed Pins
    5. 7.5 Pad State After Application of Power to Chip, but Before Reset Release
    6. 7.6 Connections for Unused Pins
  8. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Current Consumption (CC3235MODS and CC3235MODAS)
      1.      21
      2.      22
    5. 8.5  Current Consumption (CC3235MODSF and CC3235MODASF)
      1.      24
      2.      25
    6. 8.6  TX Power Control for 2.4 GHz Band
    7. 8.7  TX Power Control for 5 GHz
    8. 8.8  Brownout and Blackout Conditions
    9. 8.9  Electrical Characteristics for GPIO Pins
      1. 8.9.1 Electrical Characteristics for Pin Internal Pullup and Pulldown (25°C)
    10. 8.10 CC3235MODAx Antenna Characteristics
    11. 8.11 WLAN Receiver Characteristics
      1.      33
      2.      34
    12. 8.12 WLAN Transmitter Characteristics
      1.      36
      2.      37
    13. 8.13 BLE and WLAN Coexistence Requirements
    14. 8.14 Reset Requirement
    15. 8.15 Thermal Resistance Characteristics for MOB and MON Packages
    16. 8.16 Timing and Switching Characteristics
      1. 8.16.1 Power-Up Sequencing
      2. 8.16.2 Power-Down Sequencing
      3. 8.16.3 Device Reset
      4. 8.16.4 Wake Up From Hibernate Timing
      5. 8.16.5 Peripherals Timing
        1. 8.16.5.1  SPI
          1. 8.16.5.1.1 SPI Master
          2. 8.16.5.1.2 SPI Slave
        2. 8.16.5.2  I2S
          1. 8.16.5.2.1 I2S Transmit Mode
          2. 8.16.5.2.2 I2S Receive Mode
        3. 8.16.5.3  GPIOs
          1. 8.16.5.3.1 GPIO Input Transition Time Parameters
        4. 8.16.5.4  I2C
        5. 8.16.5.5  IEEE 1149.1 JTAG
        6. 8.16.5.6  ADC
        7. 8.16.5.7  Camera Parallel Port
        8. 8.16.5.8  UART
        9. 8.16.5.9  External Flash Interface
        10. 8.16.5.10 SD Host
        11. 8.16.5.11 Timers
  9. 9 Detailed Description
    1. 9.1  Overview
    2. 9.2  Functional Block Diagram
    3. 9.3  Arm Cortex-M4 Processor Core Subsystem
    4. 9.4  Wi-Fi Network Processor Subsystem
      1. 9.4.1 WLAN
      2. 9.4.2 Network Stack
    5. 9.5  Security
    6. 9.6  FIPS 140-2 Level 1 Certification
    7. 9.7  Power-Management Subsystem
      1. 9.7.1 VBAT Wide-Voltage Connection
    8. 9.8  Low-Power Operating Mode
    9. 9.9  Memory
      1. 9.9.1 Internal Memory
        1. 9.9.1.1 SRAM
        2. 9.9.1.2 ROM
        3. 9.9.1.3 Flash Memory
        4. 9.9.1.4 Memory Map
    10. 9.10 Restoring Factory Default Configuration
    11. 9.11 Boot Modes
      1. 9.11.1 Boot Mode List
    12. 9.12 Hostless Mode
    13. 9.13 Device Certification and Qualification
      1. 9.13.1 FCC Certification and Statement
      2. 9.13.2 IC/ISED Certification and Statement
      3. 9.13.3 ETSI/CE Certification
      4. 9.13.4 MIC Certification
    14. 9.14 Module Markings
    15. 9.15 End Product Labeling
    16. 9.16 Manual Information to the End User
  10. 10Applications, Implementation, and Layout
    1. 10.1 Typical Application
      1. 10.1.1 BLE/2.4 GHz Radio Coexistence
      2. 10.1.2 Antenna Selection (CC3235MODx only)
      3. 10.1.3 Typical Application Schematic (CC3235MODx)
      4. 10.1.4 Typical Application Schematic (CC3235MODAx)
    2. 10.2 Device Connection and Layout Fundamentals
      1. 10.2.1 Power Supply Decoupling and Bulk Capacitors
      2. 10.2.2 Reset
      3. 10.2.3 Unused Pins
    3. 10.3 PCB Layout Guidelines
      1. 10.3.1 General Layout Recommendations
      2. 10.3.2 CC3235MODx RF Layout Recommendations
        1. 10.3.2.1 Antenna Placement and Routing
        2. 10.3.2.2 Transmission Line Considerations
      3. 10.3.3 CC3235MODAx RF Layout Recommendations
  11. 11Environmental Requirements and SMT Specifications
    1. 11.1 PCB Bending
    2. 11.2 Handling Environment
      1. 11.2.1 Terminals
      2. 11.2.2 Falling
    3. 11.3 Storage Condition
      1. 11.3.1 Moisture Barrier Bag Before Opened
      2. 11.3.2 Moisture Barrier Bag Open
    4. 11.4 PCB Assembly Guide
      1. 11.4.1 PCB Land Pattern & Thermal Vias
      2. 11.4.2 SMT Assembly Recommendations
      3. 11.4.3 PCB Surface Finish Requirements
      4. 11.4.4 Solder Stencil
      5. 11.4.5 Package Placement
      6. 11.4.6 Solder Joint Inspection
      7. 11.4.7 Rework and Replacement
      8. 11.4.8 Solder Joint Voiding
    5. 11.5 Baking Conditions
    6. 11.6 Soldering and Reflow Condition
  12. 12Device and Documentation Support
    1. 12.1 Development Tools and Software
    2. 12.2 Firmware Updates
    3. 12.3 Device Nomenclature
    4. 12.4 Documentation Support
    5. 12.5 Related Links
    6. 12.6 Support Resources
    7. 12.7 Trademarks
    8. 12.8 Electrostatic Discharge Caution
    9. 12.9 Glossary
  13. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Mechanical, Land, and Solder Paste Drawings
    2. 13.2 Package Option Addendum
      1. 13.2.1 Packaging Information
      2. 13.2.2 Tape and Reel Information
      3. 13.2.3 CC3235MODx Tape Specifications
      4. 13.2.4 CC3235MODAx Tape Specifications

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • MOB|63
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Table 8-3 Current Consumption Summary (CC3235MODSF and CC3235MODASF) 2.4 GHz RF Band TA = 25°C, VBAT = 3.6 V
PARAMETER TEST CONDITIONS(1)(5) MIN TYP(5) MAX UNIT
MCU ACTIVE NWP ACTIVE TX 1 DSSS TX power level = 0 286 mA
TX power level = 4 202
6 OFDM TX power level = 0 255
TX power level = 4 192
54 OFDM TX power level = 0 232
TX power level = 4 174
RX 1 DSSS 74
54 OFDM 74
NWP idle connected(3) 25.2
MCU SLEEP NWP ACTIVE TX 1 DSSS TX power level = 0 282 mA
TX power level = 4 198
6 OFDM TX power level = 0 251
TX power level = 4 188
54 OFDM TX power level = 0 228
TX power level = 4 170
RX 1 DSSS 70
54 OFDM 70
NWP idle connected(3) 21.2
MCU LPDS NWP active TX 1 DSSS TX power level = 0 266 mA
TX power level = 4 184
6 OFDM TX power level = 0 242
TX power level = 4 176
54 OFDM TX power level = 0 217
TX power level = 4 154
RX 1 DSSS 53
54 OFDM 53
NWP LPDS(2) SRAM Retention 64 KB 120 µA
256 KB 135
NWP idle connected(3) 710
MCU SHUTDOWN MCU shutdown 1 µA
MCU HIBERNATE MCU hibernate 5.5 µA
Peak calibration current(4) VBAT = 3.6 V 420 mA
VBAT = 3.3 V 450
VBAT = 2.3 V 610
(1) TX power level = 0 implies maximum power (see Figure 8-2, Figure 8-2, and Figure 8-3). TX power level = 4 implies output power backed off approximately 4 dB.
(2) LPDS current does not include the external serial flash. The CC3235MODx andCC3235MODAx can be configured to retain 0 KB, 64 KB, 128 KB, 192 KB, or 256 KB of SRAM in LPDS. Each 64-KB block of MCU retained SRAM increases LPDS current by 4 µA.
(3) DTIM = 1
(4) The complete calibration can take up to 17 mJ of energy from the battery over a period of 24 ms. Calibration is performed sparingly, typically when coming out of HIBERNATE and only if temperature has changed by more than 20°C. The calibration event can be controlled by a configuration file in the serial flash.
(5) Typical numbers assume a VSWR of 1.5:1.