SWRS215D April   2019  – May 2021 CC3235S , CC3235SF

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Functional Block Diagrams
  5. 5 Revision History
  6. 6 Device Comparison
    1. 6.1 Related Products
  7. 7 Terminal Configuration and Functions
    1. 7.1 Pin Diagram
    2. 7.2 Pin Attributes
      1.      11
    3. 7.3 Signal Descriptions
      1.      13
    4. 7.4 Pin Multiplexing
    5. 7.5 Drive Strength and Reset States for Analog and Digital Multiplexed Pins
    6. 7.6 Pad State After Application of Power to Device, Before Reset Release
    7. 7.7 Connections for Unused Pins
  8. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Power-On Hours (POH)
    4. 8.4  Recommended Operating Conditions
    5. 8.5  Current Consumption Summary (CC3235S)
      1.      24
      2.      25
    6. 8.6  Current Consumption Summary (CC3235SF)
      1.      27
      2.      28
    7. 8.7  TX Power Control for 2.4 GHz Band
    8. 8.8  TX Power Control for 5 GHz
    9. 8.9  Brownout and Blackout Conditions
    10. 8.10 Electrical Characteristics for GPIO Pins
      1.      33
      2.      34
    11. 8.11 Electrical Characteristics for Pin Internal Pullup and Pulldown
    12. 8.12 WLAN Receiver Characteristics
      1.      37
      2.      38
    13. 8.13 WLAN Transmitter Characteristics
      1.      40
      2.      41
    14. 8.14 WLAN Transmitter Out-of-Band Emissions
      1.      43
      2.      44
    15. 8.15 BLE/2.4 GHz Radio Coexistence and WLAN Coexistence Requirements
    16. 8.16 Thermal Resistance Characteristics for RGK Package
    17. 8.17 Timing and Switching Characteristics
      1. 8.17.1 Power Supply Sequencing
      2. 8.17.2 Device Reset
      3. 8.17.3 Reset Timing
        1. 8.17.3.1 nRESET (32-kHz Crystal)
        2.       52
        3.       53
        4. 8.17.3.2 nRESET (External 32-kHz Clock)
          1.        55
      4. 8.17.4 Wakeup From HIBERNATE Mode
      5. 8.17.5 Clock Specifications
        1. 8.17.5.1 Slow Clock Using Internal Oscillator
        2. 8.17.5.2 Slow Clock Using an External Clock
          1.        60
        3. 8.17.5.3 Fast Clock (Fref) Using an External Crystal
          1.        62
        4. 8.17.5.4 Fast Clock (Fref) Using an External Oscillator
          1.        64
      6. 8.17.6 Peripherals Timing
        1. 8.17.6.1  SPI
          1. 8.17.6.1.1 SPI Master
            1.         68
          2. 8.17.6.1.2 SPI Slave
            1.         70
        2. 8.17.6.2  I2S
          1. 8.17.6.2.1 I2S Transmit Mode
            1.         73
          2. 8.17.6.2.2 I2S Receive Mode
            1.         75
        3. 8.17.6.3  GPIOs
          1. 8.17.6.3.1 GPIO Output Transition Time Parameters (Vsupply = 3.3 V)
            1.         78
          2. 8.17.6.3.2 GPIO Input Transition Time Parameters
            1.         80
        4. 8.17.6.4  I2C
          1.        82
        5. 8.17.6.5  IEEE 1149.1 JTAG
          1.        84
        6. 8.17.6.6  ADC
          1.        86
        7. 8.17.6.7  Camera Parallel Port
          1.        88
        8. 8.17.6.8  UART
        9. 8.17.6.9  SD Host
        10. 8.17.6.10 Timers
  9. 9 Detailed Description
    1. 9.1  Overview
    2. 9.2  Arm® Cortex®-M4 Processor Core Subsystem
    3. 9.3  Wi-Fi® Network Processor Subsystem
      1. 9.3.1 WLAN
      2. 9.3.2 Network Stack
    4. 9.4  Security
    5. 9.5  FIPS 140-2 Level 1 Certification
    6. 9.6  Power-Management Subsystem
    7. 9.7  Low-Power Operating Mode
    8. 9.8  Memory
      1. 9.8.1 External Memory Requirements
      2. 9.8.2 Internal Memory
        1. 9.8.2.1 SRAM
        2. 9.8.2.2 ROM
        3. 9.8.2.3 Flash Memory
        4. 9.8.2.4 Memory Map
    9. 9.9  Restoring Factory Default Configuration
    10. 9.10 Boot Modes
      1. 9.10.1 Boot Mode List
    11. 9.11 Hostless Mode
  10. 10Applications, Implementation, and Layout
    1. 10.1 Application Information
      1. 10.1.1 BLE/2.4 GHz Radio Coexistence
      2. 10.1.2 Antenna Selection
      3. 10.1.3 Typical Application
    2. 10.2 PCB Layout Guidelines
      1. 10.2.1 General PCB Guidelines
      2. 10.2.2 Power Layout and Routing
        1. 10.2.2.1 Design Considerations
      3. 10.2.3 Clock Interface Guidelines
      4. 10.2.4 Digital Input and Output Guidelines
      5. 10.2.5 RF Interface Guidelines
  11. 11Device and Documentation Support
    1. 11.1  Third-Party Products Disclaimer
    2. 11.2  Tools and Software
    3. 11.3  Firmware Updates
    4. 11.4  Device Nomenclature
    5. 11.5  Documentation Support
    6. 11.6  Related Links
    7. 11.7  Support Resources
    8. 11.8  Trademarks
    9. 11.9  Electrostatic Discharge Caution
    10. 11.10 Export Control Notice
    11. 11.11 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Packaging Information
      1. 12.1.1 Package Option Addendum
        1. 12.1.1.1 Packaging Information
        2. 12.1.1.2 Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Table 8-4 Current Consumption Summary (CC3235SF) 5 GHz RF Band TA = 25°C, VBAT = 3.6 V
PARAMETER TEST CONDITIONS(1)(2) MIN TYP(3) MAX UNIT
MCU ACTIVE NWP ACTIVE TX 6 OFDM 329 mA
54 OFDM 306
RX 54 OFDM 80
NWP idle connected(4) 25.2
MCU SLEEP NWP ACTIVE TX 6 OFDM 325 mA
54 OFDM 302
RX 54 OFDM 76
NWP idle connected(4) 21.2
MCU LPDS NWP active TX 6 OFDM 312 mA
54 OFDM 289
RX 54 OFDM 63
NWP LPDS(5) 120 µA at 64KB
135 µA at 256KB		 135 µA
NWP idle connected(4) 710
MCU SHUTDOWN MCU shutdown 1 µA
MCU HIBERNATE MCU hibernate 4.5 µA
Peak calibration current(6) VBAT = 3.6 V 290 mA
VBAT = 3.3 V 310
VBAT = 2.7 V 310
VBAT = 2.1 V 400
(1) Measurements taken at maximum TX power
(2) The CC3235x system is a constant power-source system. The active current numbers scale based on the VBAT voltage supplied.
(3) Typical numbers assume a VSWR of 1.5:1.
(4) DTIM = 1
(5) LPDS current does not include the external serial flash. The LPDS number of reported is with retention of 256KB of MCU SRAM. The CC3235x device can be configured to retain 0KB, 64KB, 128KB, 192KB, or 256KB of SRAM in LPDS. Each 64-KB block of MCU retained SRAM increases LPDS current by 4 µA.
(6) The complete calibration can take up to 17 mJ of energy from the battery over a period of 24 ms. Calibration is performed sparingly, typically when coming out of HIBERNATE and only if temperature has changed by more than 20°C. The calibration event can be controlled by a configuration file in the serial flash.