2 Revision History
Changes from February 27, 2013 to September 17, 2018
- Format and structure changes throughout document including addition of section numbering Go
- Added Section 1.2, ApplicationsGo
- Added Device Information tableGo
- Added Section 3.1, Related ProductsGo
- Added typical conditions statements at the beginning of , SpecificationsGo
- Added Section 5.2, ESD RatingsGo
- Changed the MIN value of the V(DVCC_BOR_hys) parameter from 60 mV to 50 mV in Section 5.19, PMM, Brownout Reset (BOR)Go
- Updated notes (1) and (2) and added note (3) in Section 5.25,Wake-up Times From Low-Power Modes and ResetGo
- Removed ADC10DIV from the formula for the TYP value in the second row of the tCONVERT parameter in Section 5.36, 10-Bit ADC, Timing Parameters, because ADC10CLK is after divisionGo
- For the IAVCC_REF parameter, switched rows for TYP and MAX values (higher values are with Test Condition of CBREFACC = 0) in Section 5.40, Comparator_BGo
- Changed the MAX value of the tEN_CMP parameter with Test Conditions of "CBPWRMD = 10" from 1.5 µs to 100 µs in Section 5.40, Comparator_BGo
- In Section 5.43.3, changed Test Conditions "RF crystal oscillator only" and added noteGo
- Corrected spelling of NMIIFG in Table 6-8, System Module Interrupt Vector RegistersGo
- Added Section 8, Device and Documentation Support, and moved Device Nomenclature, ESD Caution, and Trademarks sections to itGo
- Added Section 9, Mechanical, Packaging, and Orderable InformationGo