SCHS026E November   1998  – August 2024 CD4016B

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Absolute Maximum Ratings
    2. 4.2 ESD Ratings
    3. 4.3 Recommended Operating Conditions
    4. 4.4 Thermal Information
    5. 4.5 Electrical Characteristics
    6. 4.6 Electrical Characteristics
    7. 4.7 Typical Characteristics
  6. 5Parameter Measurement Information
  7. 6Device and Documentation Support
    1. 6.1 Documentation Support
      1. 6.1.1 Receiving Notification of Documentation Updates
      2. 6.1.2 Support Resources
      3. 6.1.3 Trademarks
      4. 6.1.4 Electrostatic Discharge Caution
      5. 6.1.5 Glossary
  8. 7Revision History
  9. 8Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • J|14
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

CHARACTERISTIC TEST CONDITIONS LIMITS AT INDICATED TEMPERATURES (°C) UNITS
VIN (V) VDD (V) +25
−55 −40 +85 +125 TYP MAX
Quiescent Device Current, IDD 0,5 5 025 0.25 7.5 7.5 0.01 0.25 µA
0,10 10 0.5 0.5 15 15 0.01 0.5
0,15 15 1 1 30 30 0.01 1
0,20 20 5 5 150 150 0.02 5
Signal Inputs (Vis) and Output (Vos)

On-State

Resistance, ron MAX

VC=VDD

RL=10kΩ Returned to

CD4016B
Vis=VDD or VSS 10 600 610 840 960 660 Ω
Vis=4.75 to 5.75V 10 1870 1900 2380 2600 2000
Vis=VDD or VSS 15 360 370 520 600 400
Vis=7.25 to 7.75V 15 775 790 1080 1230 850

ΔOn-State

Resistance Between Any 2 Switches, Δron

RL=10kΩ, VC = VDD 5 15 Ω
10 10
15 5
Total Harmonic Distortion, THD VC=VDD =5V, VSS = −5V,Vis(p-p) = 5V (Sine wave centered on 0V) RL = 10kΩ, fis = 1kHz sine wave 0.4 %
−3dB Cutoff Frequency (Switch on) VC=VDD=5V, VSS=−5V, Vis(p-p) (Sine wave centered on 0V) RL=1kΩ, 40 MHz
−50dB Feed-through Frequency (Switch off) VC=VSS= −5V, Vis(p-p)=5V (Sine wave centered on 0V) RL = 1 lkΩ 1.25 MHz

Input/Output

Leakage Current (Switch off) Iis MAX

VC = 0V

Vis = 18V, VOS = 0V;

Vis = 0V, VOS = 18V

18 ±0.1 ±0.1 ±1 ±1 10−4 ±0.1 μA
−50dB Crosstalk Frequency

VC(A) = VDD= +5V, VC(B) = VSS=−5V, Vis(A)= 5Vp-p, 50Ω source

RL= 1kΩ

0.9 MHz

Propagation

Delay (Signal Input to Signal Output) tpd

RL = 200kΩ

VC = VDD, VSS = GND, CL = 50pF

Vis = Square Wave 0 to VDD

tr, tf = 20ns

5 40 100 ns
10 20 40
15 15 30

Capacitance:

Input, Cis Output, COS Feed-through, Cios

VDD = +5V

VC=VSS=−5V

4 pF
4
0.2
Control (VC)
Control Input Low Voltage, VILC(MAX)

|Iis|< 10 µA

Vis = VSS, VOS = VDD and Vis = VDD, VOS = VSS

5,10, 15 0.9 0.9 0.4 0.4 0.7 V
Control Input High Voltage, VIHC See Figure 4-8 5 3.5 (Min.) V
10 7 (Min.)
15 11 (Min.)
Input Current, IIN (MAX) Input Current, IIN (MAX)Vis⩽ VDD 18 ±0.1 ±0.1 ±1 ±1 ±10−5 ±0.1 µA
VDD − VSS = 18V
VCC ⩽ VDD − VSS
Crosstalk (Control Input to Signal Output) VC= 10V (Sq. Wave) 10 50 mV
tr, tf = 20ns
RL = 10kΩ
Turn-On Propagation Delay Turn-On Propagation Delay tr, tf = 20ns 5 35 70 ns
CL = 50pF 10 20 40
RL= 1kΩ 15 15 30
Maximum Control Input Repetition Rate Maximum Control Input Repetition Rate

Vis = VDD< VSS = GND, RL = 1kΩ to GND, CL = 50pF, VC = 10V(Square wave centered on 5V)

tr, tf = 20ns, VOS = ½ VOS at 1kHz

10 10 MHz
Input Capacitance, CIN 5 7.5 µF