SCHS180D November   1997  – July 2022 CD54HC365 , CD54HC366 , CD54HCT365 , CD74HC365 , CD74HC366 , CD74HCT365

PRODUCTION DATA  

  1. 1 Features
  2. 2 Description
  3. 3 Revision History
  4. 4 Pin Configuration and Functions
  5. 5 Specifications
    1. 5.1 Absolute Maximum Ratings (1)
    2. 5.2 Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Electrical Characteristics
    5. 5.5 HCT Input Loading Table
    6. 5.6 Switching Characteristics
  6. 6 Parameter Measurement Information
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Device Functional Modes
  8. 8 Power Supply Recommendations
  9. 9 Layout
    1. 9.1 Layout Guidelines
  10. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • N|16
  • D|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.1 Overview

The ’HC365, ’HCT365, and ’HC366 silicon gate CMOS three-state buffers are general purpose high-speed non-inverting and inverting buffers. They have high drive current outputs which enable high speed operation even when driving large bus capacitances. These circuits possess the low power dissipation of CMOS circuitry, yet have speeds comparable to low power Schottky TTL circuits. Both circuits are capable of driving up to 15 low power Schottky inputs.

The ’HC365 and ’HCT365 are non-inverting buffers, whereas the ’HC366 is an inverting buffer. These devices have two three-state control inputs (OE1 and OE2) which are NORed together to control all six gates.

The ’HCT365 logic families are speed, function and pin compatible with the standard LS logic family.