The CDCE62002 device is a high-performance clock generator featuring low output jitter, a high degree of configurability through a SPI interface, and programmable start-up modes determined by on-chip EEPROM. Specifically tailored for clocking data converters and high-speed digital signals, the CDCE62002 achieves jitter performance under 0.5 ps RMS (1).
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
CDCE62002 | VQFN (32) | 5.00 mm × 5.00 mm |
Changes from D Revision (February 2012) to E Revision
Changes from C Revision (March 2011) to D Revision
Changes from B Revision (February 2010) to C Revision
Changes from A Revision (July, 2009) to B Revision
Changes from * Revision (June 2009) to A Revision
It incorporates a synthesizer block with partially integrated loop filter, a clock distribution block including programmable output formats, and an input block featuring an innovative smart multiplexer. The clock distribution block includes two individually programmable outputs that can be configured to provide different combinations of output formats (LVPECL, LVDS, LVCMOS). Each output can also be programmed to a unique output frequency (ranging from 10.94 MHz to 1.175 GHz (1)). If Both outputs are configured in single-ended mode (such as LVCMOS), the CDCE62002 supports up to four outputs. The input block includes one universal differential inputs which support frequencies up to 500 MHz and an auxiliary input that can be configured to connect to an external AT-Cut crystal through an onboard oscillator block. The smart input multiplexer has two modes of operation, manual and automatic. In manual mode, the user selects the synthesizer reference through the SPI interface. In automatic mode, the input multiplexer will automatically select between the highest priority input clock available.
PIN | TYPE | DESCRIPTION(1) | |
---|---|---|---|
NAME | NO. | ||
AUX_IN | 2 | I | Auxiliary Input is a Crystal input pin that connect to an internal oscillator circuitry. |
EXT_LFN | 26 | Analog | External Loop Filter Input Negative. |
EXT_LFP | 25 | Analog | External Loop Filter Input Positive |
GND | PAD | Ground | Ground is on Thermal PAD. See Layout Guidelines |
GND_PLLDIV | 21 | Ground | Ground for PLL Divider circuitry. (short to GND) |
PD | 6 | I | PD or Power-Down Pin is an active low pin and can be activated externally or through the corresponding Bit in SPI Register 2 While PD is asserted (low), the device is shut down. When PD switches high the EEPROM becomes loaded into the RAM. After the selected input clock signal becomes available, the VCO starts calibration and the PLL aims to achieve lock. All Output dividers become initiated. During self-calibration, the outputs are held static (for example, logical zero). PD pin has an internal 150-kΩ pullup resistor. Note: The SPI_LE signal has to be high in order for the EEPROM to load correctly into RAM on the Rising edge of PD. |
PLL_LOCK | 32 | O | PLL Lock indicator |
REF_IN+ | 29 | I | Universal Input Buffer (LVPECL, LVDS, LVCMOS) positive input for the Reference Clock. |
REF_IN– | 30 | I | Universal Input Buffer (LVPECL, LVDS,) negative input for the Reference Clock. This pin must be pulled to ground through 1-kΩ resistor when input is selected LVCMOS. |
REG_CAP1 | 5 | Analog | Capacitor for the internal Regulator. Connect to a 10-μF Capacitor (Y5V) |
REG_CAP2 | 27 | Analog | Capacitor for the internal Regulator. Connect to a 10-μF Capacitor (Y5V) |
REG_CAP3 | 20 | Analog | Capacitor for the internal Regulator. Connect to a 10-μF Capacitor (Y5V) |
REG_CAP4 | 23 | Analog | Capacitor for the internal Regulator. Connect to a 10-μF Capacitor (Y5V) |
SPI_CLK | 17 | I | LVCMOS input, serial Control Clock Input for the SPI bus interface, with Hysteresis. |
SPI_LE | 18 | I | LVCMOS input, control Latch Enable for Serial Programmable Interface. Note: The SPI_LE signal has to be high in order for the EEPROM to load correctly on the Rising edge of PD. The input has an internal 150-kΩ pull-up resistor |
SPI_MISO | 7 | O | 3-state LVCMOS Output that is enabled when SPI_LE is asserted low. It is the serial Data Output to the SPI bus interface. |
SPI_MOSI | 8 | I | LVCMOS input, Master Out Slave In as a serial Control Data Input to CDCE62002 for the SPI bus interface. |
TESTSYNC | 19 | I | Reserved Pin. Pull this pin down to ground using 1-kΩ resistor. |
U0P:U0N U1P:U1N |
11,10 15,14 |
O | The outputs of CDCE62002 are user definable and can be any combination of up to 2 LVPECL outputs, 2 LVDS outputs or up to 4 LVCMOS outputs. The outputs are selectable through SPI interface. The power-up setting is EEPROM configurable. |
VBB | 3 | Analog | Capacitor for the internal termination Voltage. Connect to a 1-μF Capacitor (Y5V) |
VCC_AUX | 1 | A. Power | 3.3-V Supply Power for Crystal/Auxiliary Input Buffer Circuitry |
VCC_IN | 31 | A. Power | 3.3-V Supply Power for Input Buffer Circuitry |
VCC_OUT0 | 9, 12 | Power | 3.3-V Supply for the Output Buffers. |
VCC_OUT1 | 13, 16 | ||
VCC_PLLA | 28 | A. Power | 3.3-V Supply Power for the PLL circuitry. |
VCC_PLLD | 4 | Power | 3.3-V Supply Power for the PLL circuitry. |
VCC_PLLDIV | 22 | Power | 3.3-V Supply Power for the PLL circuitry. |
VCC_VCO | 24 | A. Power | 3.3-V Supply Power for the VCO circuitry. |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage VCC(2) | –0.5 | V | ||
Input voltage, VI (3) | –0.5 | V | ||
Output voltage, VO (3) | –0.5 | V | ||
Input current (VI < 0, VI > VCC) | ±20 | mA | ||
Output current for LVPECL/LVCMOS Outputs (0 < VO < VCC) | ±50 | mA | ||
TJ | Junction temperature | 125 | °C | |
Tstg | Storage temperature | –65 | 150 | °C |
THERMAL METRIC(1) | CDCE62002 | UNIT | ||
---|---|---|---|---|
QFN (RGZ) | ||||
32 PINS | ||||
RθJA | Junction-to-ambient thermal resistance (JEDEC Compliant Board - 3×3 vias on pad) | 0-lfm Airflow | 35 | °C/W |
200-lfm Airflow | 28.3 | |||
400-lfm Airflow | 27.2 | |||
RθJP | Junction-to-pad | 1.13 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
POWER SUPPLY | |||||||
Supply voltage, VCC_OUT, VCC_PLLDIV, VCC_PLLD, VCC_IN, and VCC_AUX | 3 | 3.3 | 3.6 | V | |||
Analog supply voltage, VCC_PLLA, & VCC_VCO | 3 | 3.3 | 3.6 | V | |||
PLVPECL | REF at 30.72 MHz, outputs are LVPECL | Output 1 = 491.52 MHz
Output 2 = 245.76 MHz In case of LVCMOS Outputs (1) = 245.76MHz |
850 | mW | |||
PLVDS | REF at 30.72 MHz, outputs are LVDS | 750 | mW | ||||
PLVCMOS | REF at 30.72 MHz, outputs are LVCMOS | 800 | mW | ||||
POFF | REF at 30.72 MHz | Outputs are disabled | 450 | mW | |||
PPD | Device is powered down | 40 | mW | ||||
DIFFERENTIAL INPUT MODE (REF_IN) | |||||||
Differental Input amplitude, (VIN+ – VIN–) | 0.1 | 1.3 | V | ||||
Common-mode input voltage, VIC | 1.0 | VCC–03 | V | ||||
IIH | Differential input current high (no internal termination) | VI = VCC, VCC = 3.6 V |
20 | μA | |||
IIL | Differential input current low (no internal termination) | VI = 0 V, VCC = 3.6 V |
–20 | μA | |||
Input Capacitance on REF_IN | 3 | pF | |||||
CRYSTAL INPUT SPECIFICATIONS | |||||||
On-chip load capacitance | 8 | 10 | pF | ||||
Equivalent Series Resistance (ESR) | 50 | Ω | |||||
LVCMOS INPUT MODE (SPI_CLK,SPI_MOSI,SPI_LE,PD, REF_IN) | |||||||
VIL | Low-level input voltage LVCMOS | 0 | 0.3 VCC | V | |||
VIH | High-level input voltage LVCMOS | 0.7 VCC | VCC | V | |||
VIK | LVCMOS input clamp voltage | VCC = 3 V, II = –18 mA | –1.2 | V | |||
IIH | LVCMOS input current VI = | VCC, VCC = 3.6 V | 20 | μA | |||
IIL | LVCMOS input (Except REF_IN) | VI = 0 V, VCC = 3.6 V | –10 | –40 | μA | ||
IIL | LVCMOS input (REF_IN) | VI = 0 V, VCC = 3.6 V | –10 | 10 | μA | ||
CI | Input capacitance (LVCMOS signals) | VI = 0 V or VCC = 3 | 3 | pF | |||
SPI OUTPUT (MISO) / PLL_LOCK | |||||||
IOH | High-level output current | VCC = 3.3 V, | VO = 1.65 V | –30 | mA | ||
IOL | Low-level output current | VCC = 3.3 V, | VO = 1.65 V | 33 | mA | ||
VOH | High-level output voltage for LVCMOS outputs | VCC = 3 V, | IOH = –100 μA | VCC–0.5 | V | ||
VOL | Low-level output voltage for LVCMOS outputs | VCC = 3 V, | IOH = 100 μA | 0.3 | V | ||
CO | Output capacitance o MISO | VCC = 3.3 V; VO = 0 V or VCC | 3 | pF | |||
IOZH | 3-state output current | VO = VCC, VO = 0 V | 5 | μA | |||
IOZL | –5 | μA | |||||
EEPROM | |||||||
EEcyc | Programming cycle of EEPROM | 100 | 1000 | Cycles | |||
EEret | Data retention | 10 | Years | ||||
VBB ( INPUT BUFFER INTERNAL TERMINATION VOLTAGE REFERENCE) | |||||||
VBB | Input termination voltage | IBB = –0.2 mA, depending on the setting | 1.2 | 1.9 | V | ||
INPUT BUFFERS INTERNAL TERMINATION RESISTORS (REF_IN) | |||||||
Termination resistance | Single-ended | 5 | kΩ | ||||
PHASE DETECTOR | |||||||
fCPmax | Charge pump frequency | 0.04 | 40 | MHz | |||
LVCMOS | |||||||
fclk | Output frequency, see Figure 7 | Load = 5 pF to GND | 250 | MHz | |||
VOH | High-level output voltage for LVCMOS outputs | VCC = min to max | IOH = –100 μA | VCC–0.5 | V | ||
VOL | Low-level output voltage for LVCMOS outputs | VCC = min to max | IOL = 100 μA | 0.3 | V | ||
IOH | High-level output current | VCC = 3.3 V | VO = 1.65 V | –30 | mA | ||
IOL | Low-level output current | VCC = 3.3 V | VO = 1.65 V | 33 | mA | ||
tsko | Skew, output to output For Y0 to Y1 | Both outputs set at 122.88 MHz, reference = 30.72 MHz |
75 | ps | |||
CO | Output capacitance on Y0 to Y1 | VCC = 3.3 V; VO = 0 V or VCC | 5 | pF | |||
IOZH | Tristate LVCMOS output current | VO = VCC | 5 | μA | |||
IOZL | Tristate LVCMOS output current | VO = 0 V | -5 | μA | |||
IOPDH | Power-down output current | VO = VCC | 25 | μA | |||
IOPDL | Power-down output current | VO = 0 V | 5 | μA | |||
Duty cycle | LVCMOS | 45% | 55% | ||||
tslew-rate | Output rise/fall slew rate | 3.6 | 5.2 | V/ns | |||
LVDS OUTPUT | |||||||
fclk | Output frequency | Configuration load (see Figure 8) | 0 | 800 | MHz | ||
|VOD| | Differential output voltage | RL = 100 Ω | 270 | 550 | mV | ||
ΔVOD | LVDS VOD magnitude change | 50 | mV | ||||
VOS | Offset voltage | –40°C to 85°C | 1.24 | V | |||
ΔVOS | VOS magnitude change | 40 | mV | ||||
Short-circuit Vout+ to ground | VOUT = 0 | 27 | mA | ||||
Short-cicuit Vout- to ground | VOUT = 0 | 27 | mA | ||||
tsk(o) | Skew, output to output For Y0 to Y1 | Both outputs set at 122.88 MHz reference = 30.72 MHz |
10 | ps | |||
CO | Output capacitance on Y0 to Y1 | VCC = 3.3 V; VO = 0 V or VCC | 5 | pF | |||
IOPDH | Power-down output current | VO = VCC | 25 | μA | |||
IOPDL | Power-down output current | VO = 0 V | 5 | μA | |||
Duty cycle | 45% | 55% | |||||
tr / tf | Rise and fall time | 20% to 80% of VOPP | 110 | 160 | 190 | ps | |
LVCMOS-TO-LVDS | |||||||
tskP_C | Output skew between LVCMOS and LVDS outputs | VCC/2 to crosspoint | 1.4 | 1.7 | 2.0 | ns | |
LVPECL OUTPUT | |||||||
fclk | Output frequency | Configuration load (see Figure 9 and Figure 10) | 0 | 1175 | MHz | ||
VOH | LVPECL high-level output voltage | Load | VCC –1.1 | VCC –0.88 | V | ||
VOL | LVPECL low-level output voltage | Load | VCC –2.02 | VCC –1.48 | V | ||
|VOD| | Differential output voltage | 510 | 870 | mV | |||
tsko | Skew, output to output For Y0 to Y1 | Both outputs set at 122.88 MHz | 15 | ps | |||
CO | Output capacitance on Y0 to Y1 | VCC = 3.3 V; VO = 0 V or VCC | 5 | pF | |||
IOPDH | Power-down output current | VO = VCC | 25 | μA | |||
IOPDL | Power-down output current | VO = 0 V | 5 | μA | |||
Duty cycle | 45% | 55% | |||||
tr / tf | Rise and fall time | 20% to 80% of VOPP | 55 | 75 | 135 | ps | |
LVDS-TO- LVPECL | |||||||
tskP_C | Output skew between LVDS and LVPECL outputs | Crosspoint to Crosspoint | 130 | 200 | 280 | ps | |
LVCMOS-TO- LVPECL | |||||||
tskP_C | Output skew between LVCMOS and LVPECL outputs | VCC/2 to Crosspoint | 1.6 | 1.8 | 2.2 | ns | |
LVPECL Hi-PERFORMANCE OUTPUT | |||||||
VOH | LVPECL high-level output voltage | Load | VCC –1.11 | VCC –0.91 | V | ||
VOL | LVPECL low-level output voltage | Load | VCC –2.06 | VCC –1.84 | V | ||
|VOD| | Differential output voltage | 670 | 950 | mV | |||
tr / tf | Rise and fall time | 20% to 80% of VOPP | 55 | 75 | 135 | ps |
PARAMETER | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
fClock | Clock frequency for the SPI_CLK | 20 | MHz | ||
t1 | SPI_LE to SPI_CLK setup time | 10 | ns | ||
t2 | SPI_MOSI to SPI_CLK setup time | 10 | ns | ||
t3 | SPI_MOSI to SPI_CLK hold time | 10 | ns | ||
t4 | SPI_CLK high duration | 25 | ns | ||
t5 | SPI_CLK low duration | 25 | ns | ||
t6 | SPI_CLK to SPI_LE hold time | 10 | ns | ||
t7 | SPI_LE pulse width | 20 | ns | ||
t8 | SPI_CLK to MISO data valid | 10 | ns | ||
t9 | SPI_LE to SPI_MISO data valid | 10 | ns |