SLPS313A September   2013  – January 2018 CSD13202Q2

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
    1.     Device Images
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Characteristics
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q2 Package Dimensions
      1. 7.1.1 Recommended PCB Pattern
      2. 7.1.2 Recommended Stencil Pattern
    2. 7.2 Q2 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQK|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This 12-V, 7.5-mΩ NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The SON 2 × 2 offers excellent thermal performance for the size of the package.

Top View
CSD13202Q2 P0108-01_LPS235.gif

Product Summary

TA = 25°CTYPICAL VAUEUNIT
VDS Drain-to-Source Voltage 12 V
Qg Gate Charge Total (4.5 V) 5.1 nC
Qgd Gate Charge Gate-to-Drain 0.76 nC
RDS(on) Drain-to-Source On-Resistance VGS = 2.5 V 9.1 mΩ
VGS = 4.5 V 7.5
VGS(th) Threshold Voltage 0.8 V

Device Information

DEVICEMEDIAQTYPACKAGESHIP
CSD13202Q2 7-Inch Reel 3000 SON
2.00-mm × 2.00-mm
Plastic Package		 Tape and Reel

Absolute Maximum Ratings

TA = 25°CVALUEUNIT
VDS Drain-to-Source Voltage 12 V
VGS Gate-to-Source Voltage ±8 V
ID Continuous Drain Current (Package Limit) 22 A
Continuous Drain Current(1) 14.4
IDM Pulsed Drain Current, TA = 25°C(2) 76 A
PD Power Dissipation(1) 2.7 W
TJ, TSTG Operating Junction,
Storage Temperature		 –55 to 150 °C
EAS Avalanche Energy, Single Pulse
ID = 20 A, L = 0.1 mH, RG = 25 Ω		 20 mJ
  1. RθJA = 45°C/W on 1-in2 Cu (2-oz) on 0.06-in thick FR4 PCB.
  2. Pulse duration 10 μs, duty cycle ≤ 2%.