SLPS448F July   2013  – January 2022 CSD13381F4

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 CSD13381F4 Embossed Carrier Tape Dimensions

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJC|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This 140-mΩ, 12-V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-source voltage 12 V
Qg Gate charge total (4.5 V) 1060 pC
Qgd Gate charge gate-to-drain 140 pC
RDS(on) Drain-to-source on-resistance VGS = 1.8 V 310 mΩ
VGS = 2.5 V 170 mΩ
VGS = 4.5 V 140 mΩ
VGS(th) Threshold voltage 0.85 V
Ordering Information
DEVICE(1) QTY MEDIA PACKGE SHIP
CSD13381F4 3000 7-inch reel Femto (0402) 1.0-mm × 0.6-mm SMD lead less Tape and reel
CSD13381F4T 250
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C unless otherwise stated VALUE UNIT
VDS Drain-to-source voltage 12 V
VGS Gate-to-source voltage 8 V
ID Continuous drain current, TA = 25°C(1) 2.1 A
IDM Pulsed drain current, TA = 25°C(2) 7 A
IG Continuous gate clamp current 35 mA
Pulsed gate clamp current(2) 350
PD Power dissipation(1) 500 mW
ESD Rating Human body model (HBM) 4 kV
Charged device model (CDM) 2 kV
TJ,
Tstg		 Operating junction and
storage temperature range		 –55 to 150 °C
EAS Avalanche energy, single pulse ID = 7.4 A,
L = 0.1 mH, RG = 25 Ω		 2.7 mJ
(1) Typical RθJA = 90°C/W on 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB.
(2) Pulse duration ≤ 300 μs, duty cycle ≤ 2%
Typical Device Dimensions
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