SLPS235 Data sheet

SLPS235E October 2009 – November 2024 CSD16301Q2

PRODUCTION DATA

4.1 Electrical Characteristics

T_A = 25°C (unless otherwise specified)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0V, I_D = 250μA	25			V
I_DSS	Drain-to-source leakage current	V_GS = 0V, V_DS = 20V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0V, V_GS = +10/–8V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_DS = 250μA	0.9	1.1	1.55	V
R_DS(on)	Drain-to-source on resistance	V_GS = 3V, I_DS = 4A		27	34	mΩ
		V_GS = 4.5V, I_DS = 4A		23	29
		V_GS = 8V, I_DS = 4A		19	24
g_fs	Transconductance	V_DS = 15V, I_DS = 4A		16.5		S
DYNAMIC CHARACTERISTICS
C_ISS	Input capacitance	V_GS = 0V, V_DS = 12.5V, ƒ = 1MHz		260	340	pF
C_OSS	Output capacitance			165	215	pF
C_RSS	Reverse transfer capacitance			13	17	pF
R_g	Series gate resistance			1.3	2.6	Ω
Q_g	Gate charge total (4.5 V)	V_DS = 10V, I_DS = 4A		2.0	2.8	nC
Q_gd	Gate charge gate-to-drain			0.4		nC
Q_gs	Gate charge gate-to-source			0.6		nC
Qg(th)	Gate charge at Vth			0.3		nC
Q_OSS	Output charge	V_DS = 12.5V, V_GS = 0V		3.0		nC
t_d(on)	Turnon delay time	V_DS = 12.5V, V_GS = 4.5V, I_DS = 4A R_G = 2Ω		2.7		ns
t_r	Rise time			4.4		ns
t_d(off)	Turnoff delay time			4.1		ns
t_f	Fall time			1.7		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_DS = 4A, V_GS = 0V		0.8	1	V
Q_rr	Reverse recovery charge	V_DD = 12.5V, I_F = 4A, di/dt = 200A/μs		5.1		nC
t_rr	Reverse recovery time	V_DD = 12.5V, I_F = 4A, di/dt = 200A/μs		11		ns