STATIC CHARACTERISTICS |
BVDSS |
Drain-to-source voltage |
VGS = 0 V, ID = 250 μA |
25 |
|
|
V |
IDSS |
Drain-to-source leakage current |
VGS = 0 V, VDS = 20 V |
|
|
1 |
μA |
IGSS |
Gate-to-source leakage current |
VDS = 0 V, VGS = +10/–8 V |
|
|
100 |
nA |
VGS(th) |
Gate-to-source threshold voltage |
VDS = VGS, IDS = 250 μA |
0.9 |
1.1 |
1.55 |
V |
RDS(on) |
Drain-to-source on resistance |
VGS = 3 V, IDS = 4 A |
|
27 |
34 |
mΩ |
VGS = 4.5 V, IDS = 4 A |
|
23 |
29 |
VGS = 8 V, IDS = 4 A |
|
19 |
24 |
gfs |
Transconductance |
VDS = 15 V, IDS = 4 A |
|
16.5 |
|
S |
DYNAMIC CHARACTERISTICS |
CISS |
Input capacitance |
VGS = 0 V, VDS = 12.5 V, ƒ = 1 MHz |
|
260 |
340 |
pF |
COSS |
Output capacitance |
|
165 |
215 |
pF |
CRSS |
Reverse transfer capacitance |
|
13 |
17 |
pF |
Rg |
Series gate resistance |
|
|
1.3 |
2.6 |
Ω |
Qg |
Gate charge total (4.5 V) |
VDS = 10 V, IDS = 4 A |
|
2.0 |
2.8 |
nC |
Qgd |
Gate charge gate-to-drain |
|
0.4 |
|
nC |
Qgs |
Gate charge gate-to-source |
|
0.6 |
|
nC |
Qg(th) |
Gate charge at Vth |
|
0.3 |
|
nC |
QOSS |
Output charge |
VDS = 12.5 V, VGS = 0 V |
|
3.0 |
|
nC |
td(on) |
Turnon delay time |
VDS = 12.5 V, VGS = 4.5 V, IDS = 4 A RG = 2 Ω |
|
2.7 |
|
ns |
tr |
Rise time |
|
4.4 |
|
ns |
td(off) |
Turnoff delay time |
|
4.1 |
|
ns |
tf |
Fall time |
|
1.7 |
|
ns |
DIODE CHARACTERISTICS |
VSD |
Diode forward voltage |
IDS = 4 A, VGS = 0 V |
|
0.8 |
1 |
V |
Qrr |
Reverse recovery charge |
VDD = 12.5 V, IF = 4 A, di/dt = 200 A/μs |
|
5.1 |
|
nC |
trr |
Reverse recovery time |
|
11 |
|
ns |