SLPS220E August   2009  – December 2023 CSD16321Q5

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
    4. 5.4 Electrostatic Discharge Caution
    5. 5.5 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)

GUID-C7386B24-CD18-4A78-A964-613427DF7639-low.gifFigure 4-1 Transient Thermal Impedance
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Figure 4-2 Saturation Characteristics
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VDS = 12.5V ID = 25A
Figure 4-4 Gate Charge
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ID = 250µA
Figure 4-6 Threshold Voltage vs Temperature
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ID = 25A VGS = 8V
Figure 4-8 On Resistance vs Temperature
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Single pulse, max RθJC = 1.1°C/W
Figure 4-10 Maximum Safe Operating Area
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Figure 4-12 Maximum Drain Current vs Temperature
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VDS = 5V
Figure 4-3 Transfer Characteristics
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Figure 4-5 Capacitance
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Figure 4-7 On Resistance vs Gate Voltage
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Figure 4-9 Typical Diode Forward Voltage
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Figure 4-11 Single Pulse Unclamped Inductive Switching