SLPS219C August 2009 – October 2023 CSD16322Q5
PRODUCTION DATA
- 1
- 1Features
- 2Applications
- 3Description
- 4Revision History
- 5Electrical Characteristics
- 6Thermal Characteristics
- 7Typical MOSFET Characteristics
- 8Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
- DQH|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information
3 Description
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.
Top ViewProduct Summary
| VDS | Drain to Source Voltage | 25 | V | |
| Qg | Gate Charge Total (4.5 V) | 6.8 | nC | |
| Qgd | Gate Charge Gate to Drain | 1.3 | nC | |
| RDS(on) | Drain to Source On Resistance | VGS = 3 V | 5.4 | mΩ |
| VGS = 4.5 V | 4.6 | mΩ | ||
| VGS = 8 V | 3.9 | mΩ | ||
| VGS(th) | Threshold Voltage | 1.1 | V | |
Ordering Information
| Device | Package | Media | Qty | Ship |
|---|---|---|---|---|
| CSD16322Q5 | SON 5-mm × 6-mm Plastic Package | 13-Inch Reel | 2500 | Tape and Reel |
Absolute Maximum Ratings
| TA = 25°C unless otherwise stated | VALUE | UNIT | |
| VDS | Drain to Source Voltage | 25 | V |
| VGS | Gate to Source Voltage | +10 / –8 | V |
| ID | Continuous Drain Current, TC = 25°C | 97 | A |
| Continuous Drain Current(1) | 21 | A | |
| IDM | Pulsed Drain Current, TA = 25°C(2) | 136 | A |
| PD | Power Dissipation(1) | 3.1 | W |
| TJ, TSTG | Operating Junction and Storage Temperature Range | –55 to 150 | °C |
| EAS | Avalanche Energy, single pulse ID = 50 A, L = 0.1 mH, RG = 25 Ω | 125 | mJ |
(1) Typical RθJA = 39°C/W on 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤300 μs, duty cycle ≤2%
RDS(on) vs VGS
GATE CHARGE