SLPS218D August 2009 – October 2023 CSD16325Q5
PRODUCTION DATA
- 1
- 1Features
- 2Applications
- 3Description
- Revision History
- 4Electrical Characteristics
- 5Thermal Characteristics
- 6Typical MOSFET Characteristics
- 7Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
- DQH|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information
3 Description
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.
Top ViewProduct Summary
| VDS | Drain to Source Voltage | 25 | V | |
| Qg | Gate Charge Total (4.5 V) | 18 | nC | |
| Qgd | Gate Charge Gate to Drain | 3.5 | nC | |
| RDS(on) | Drain to Source On Resistance | VGS = 3 V | 2.1 | mΩ |
| VGS = 4.5 V | 1.7 | mΩ | ||
| VGS = 8 V | 1.5 | mΩ | ||
| VGS(th) | Threshold Voltage | 1.1 | V | |
Ordering Information
| Device | Package | Media | Qty | Ship |
|---|---|---|---|---|
| CSD16325Q5 | SON 5-mm × 6-mm Plastic Package | 13-Inch Reel | 2500 | Tape and Reel |
Absolute Maximum Ratings
| TA = 25°C unless otherwise stated | VALUE | UNIT | |
| VDS | Drain to Source Voltage | 25 | V |
| VGS | Gate to Source Voltage | +10 / –8 | V |
| ID | Continuous Drain Current, TC = 25°C | 100 | A |
| Continuous Drain Current(1) | 33 | A | |
| IDM | Pulsed Drain Current, TA = 25°C(2) | 200 | A |
| PD | Power Dissipation(1) | 3.1 | W |
| TJ, TSTG | Operating Junction and Storage Temperature Range | –55 to 150 | °C |
| EAS | Avalanche Energy, single pulse ID = 100 A, L = 0.1 mH, RG = 25 Ω | 500 | mJ |
(1) Typical RθJA = 38°C/W on 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤300 μs, duty cycle ≤2%
RDS(on) vs VGS
Gate Charge