SLPS200D January   2018  – October 2023 CSD16401Q5

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Revision History
  6. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  7. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Support Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Typical MOSFET Characteristics

TA = 25°C (unless otherwise noted)

GUID-0B3437FD-563C-49BD-B53F-E6C9F1F93FFF-low.pngFigure 5-1 Transient Thermal Impedance
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Figure 5-2 Saturation Characteristics
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ID = 40 A VDS = 12.5 V
Figure 5-4 Gate Charge
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ID = 250 µA
Figure 5-6 Threshold Voltage vs Temperature
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ID = 40 A
Figure 5-8 On-Resistance vs Temperature
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Single pulse, max RθJC = 0.8°C/W
Figure 5-10 Maximum Safe Operating Area
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Figure 5-12 Maximum Drain Current vs Temperature
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VDS = 5 V
Figure 5-3 Transfer Characteristics
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Figure 5-5 Capacitance
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Figure 5-7 On-Resistance vs Gate Voltage
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Figure 5-9 Typical Diode Forward Voltage
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Figure 5-11 Single-Pulse Unclamped Inductive Switching