The
NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Product Summary
VDS |
Drain-to-source voltage |
25 |
V |
|
Qg |
Gate
charge, total (4.5 V) |
6.7 |
nC |
Qgd |
Gate
charge, gate-to-drain |
1.9 |
nC |
rDS(on) |
Drain-to-source on-resistance |
VGS = 4.5 V |
5.4 |
mΩ |
VGS = 10 V |
3.6 |
mΩ |
VGS(th) |
Threshold voltage |
1.8 |
V |
Ordering InformationDevice | Package | Media | Qty | Ship |
---|
CSD16408Q5 | SON 5-mm × 6-mm plastic package | 13-inch (33-cm) reel | 2500 | Tape and reel |
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated |
VALUE |
UNIT |
VDS | Drain-to-source voltage | 25 | V |
VGS | Gate-to-source voltage | –12 to 16 | V |
ID | Continuous drain current, TC = 25°C | 113 | A |
Continuous drain current(1) | 22 | A |
IDM | Pulsed drain current, TA = 25°C(2) | 141 | A |
PD | Power dissipation(1) | 3.1 | W |
TJ, TSTG | Operating junction and storage temperature range | –55 to 150 | °C |
EAS | Avalanche energy, single-pulse ID = 23 A, L = 0.1 mH, RG = 25 Ω | 126 | mJ |
(1) Typical RθJA = 41°C/W on 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤300 μs, duty cycle ≤2%
RDS(on) vs VGS
GATE CHARGE