2 Applications
- Notebook point of load
- Point-of-load synchronous buck in networking, telecom, and computing systems
3 Description
This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.
Top View
Product Summary
| TA = 25°C | VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-source voltage | 30 | V | |
| Qg | Gate charge total (4.5 V) | 3.9 | nC | |
| Qgd | Gate charge gate-to-drain | 0.8 | nC | |
| RDS(on) | Drain-to-source on-resistance | VGS = 3 V | 12.5 | mΩ |
| VGS = 4.5 V | 9.4 | |||
| VGS = 8 V | 8.2 | |||
| VGS(th) | Threshold voltage | 1.3 | V | |
Device Information(1)
| DEVICE | QTY | MEDIA | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD17308Q3 | 2500 | 13-Inch Reel | SON 3.30 mm × 3.30 mm
Plastic Package |
Tape and Reel |
- For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C unless otherwise stated | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-source voltage | 30 | V |
| VGS | Gate-to-source voltage | +10 / –8 | V |
| ID | Continuous drain current (package limited) | 50 | A |
| Continuous drain current, TC = 25°C | 44 | ||
| Continuous drain current(1) | 14 | ||
| IDM | Pulsed drain current, TA = 25°C(2) | 167 | A |
| PD | Power dissipation(1) | 2.7 | W |
| Power dissipation, TC = 25°C | 28 | ||
| TJ, Tstg | Operating junction and storage temperature | –55 to 150 | °C |
| EAS | Avalanche energy, single pulse
ID = 36 A, L = 0.1 mH, RG = 25 Ω |
65 | mJ |
Device Images
RDS(on) vs VGS |
Gate Charge |
