SLPS261B March   2010  – September 2014 CSD17309Q3

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q3 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQG|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 30 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 24 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = +10 / –8 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 0.9 1.2 1.7 V
RDS(on) Drain-to-Source On-Resistance VGS = 3 V, ID = 18 A 6.3 8.5 mΩ
VGS = 4.5 V, ID = 18 A 4.9 6.3 mΩ
VGS = 8 V, ID = 18 A 4.2 5.4 mΩ
gƒs Transconductance VDS = 15 V, ID = 18 A 67 S
DYNAMIC CHARACTERISTICS
CISS Input Capacitance VGS = 0 V, VDS = 15 V,
ƒ = 1 MHz		 1150 1440 pF
COSS Output Capacitance 580 750 pF
CRSS Reverse Transfer Capacitance 43 56 pF
Rg Series Gate Resistance 1.2 2.4 Ω
Qg Gate Charge Total (4.5 V) VDS = 15 V, ID = 18 A 7.5 10 nC
Qgd Gate Charge Gate-to-Drain 1.7 nC
Qgs Gate Charge Gate-to-Source 2.5 nC
Qg(th) Gate Charge at Vth 1.3 nC
QOSS Output Charge VDS = 13 V, VGS = 0 V 15 nC
td(on) Turn On Delay Time VDS = 15 V, VGS = 4.5 V,
ID = 18 A , RG = 2 Ω		 6.1 ns
tr Rise Time 9.9 ns
td(off) Turn Off Delay Time 13.2 ns
tƒ Fall Time 3.6 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage IDS = 18 A, VGS = 0 V 0.85 1 V
Qrr Reverse Recovery Charge VDD = 13 V, IF = 18 A,
di/dt = 300 A/μs		 30 nC
trr Reverse Recovery Time 23 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-Case Thermal Resistance(1) 2.0 °C/W
RθJA Junction-to-Ambient Thermal Resistance(1)(2) 57
(1) RθJC is determined with the device mounted on a 1 inch2 (6.45 cm2), Cu pad on a 1.5 inches × 1.5 inches thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1 inch2 2-oz.Cu.
m0161-01_lps202.gif
 Max RθJA = 57°C/W when mounted on 1 inch2 (6.45 cm2) of
2 oz. (0.071 mm thick) Cu.
m0161-02_lps202.gif
 Max RθJA = 174°C/W when mounted on a minimum pad area of
2 oz. (0.071 mm thick) Cu.

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
G012_LPS261.gif
Figure 1. Transient Thermal Impedance
G001_LPS261.gif
Figure 2. Saturation Characteristics
G003_LPS261.gif
Figure 4. Gate Charge
G005_LPS261.gif
Figure 6. Threshold Voltage vs Temperature
G007_LPS261.gif
Figure 8. Normalized On-State Resistance vs Temperature
G009_LPS261.gif
Figure 10. Maximum Safe Operating Area (SOA)
G011_LPS261.gif
Figure 12. Maximum Drain Current vs Temperature
G002_LPS261.gif
Figure 3. Transfer Characteristics
G004_LPS261.gif
Figure 5. Capacitance
G006_LPS261.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
G008_LPS261.gif
Figure 9. Typical Diode Forward Voltage
G010_LPS261.gif
Figure 11. Single Pulse Unclamped Inductive Switching