Refer to the PDF data sheet for device specific package drawings
This 30-V, 24-mΩ, 2-mm x 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.
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TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V | |
Qg | Gate Charge Total (4.5 V) | 2.1 | nC | |
Qgd | Gate Charge Gate-to-Drain | 0.4 | nC | |
RDS(on) | Drain-to-Source On Resistance | VGS = 3 V | 31 | mΩ |
VGS = 4.5 V | 26 | mΩ | ||
VGS = 8 V | 24 | mΩ | ||
VGS(th) | Threshold Voltage | 1.3 | V |
PART NUMBER | QTY | MEDIA | PACKAGE | SHIP |
---|---|---|---|---|
CSD17313Q2 | 3000 | 13-Inch Reel | SON 2-mm × 2-mm Plastic Package | Tape and Reel |
CSD17313Q2T | 250 | 7-Inch Reel |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | +10 / –8 | V |
ID | Continuous Drain Current (package limited) | 5 | A |
Continuous Drain Current (silicon limited), TC = 25°C | 19 | ||
Continuous Drain Current(1) | 7.3 | ||
IDM | Pulsed Drain Current, TA = 25°C(2) | 57 | A |
PD | Power Dissipation(1) | 2.4 | W |
Power Dissipation, TC = 25°C | 17 | ||
TJ, TSTG |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
EAS | Avalanche Energy, Single Pulse, ID = 19A, L = 0.1mH, RG = 25Ω |
18 | mJ |
On State Resistance vs Gate to Source Voltage![]() |
Gate Charge![]() |
Changes from D Revision (March 2013) to E Revision
Changes from C Revision (January 2013) to D Revision
Changes from B Revision (October 2010) to C Revision
Changes from A Revision (March 2010) to B Revision
Changes from * Revision (March 2010) to A Revision
PARAMETER | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Thermal resistance junction-to-case(1) | 7.4 | °C/W | ||
RθJA | Thermal resistance junction-to-ambient(1)(2) | 67 | °C/W |
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Max RθJA = 67°C/W when mounted on 1-inch2 (6.45-cm2) of 2-oz. (0.071-mm thick) Cu. |
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Max RθJA = 228°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu. |
ID = 4 A | VDS = 15 V |
ID = 250 µA |