SLPS447F July   2013  – February 2022 CSD17483F4

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJC|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Figure 3-1 Typical Part Dimensions
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 1010 pC
Qgd Gate Charge Gate-to-Drain 130 pC
RDS(on) Drain-to-Source
On-Resistance		 VGS = 1.8 V 370 mΩ
VGS = 2.5 V 240
VGS = 4.5 V 200
VGS(th) Threshold Voltage 0.85 V
Device Information
DEVICE(1) QTY MEDIA PACKAGE SHIP
CSD17483F4 3000 7-Inch Reel Femto(0402)
1.00 mm × 0.60 mm
SMD Lead Less		 Tape and Reel
CSD17483F4T 250
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C unless otherwise stated VALUE UNIT
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage 12 V
ID Continuous Drain Current, TA = 25°C(1) 1.5 A
IDM Pulsed Drain Current, TA = 25°C(2) 5 A
IG Continuous Gate Clamp Current 35 mA
Pulsed Gate Clamp Current(2) 350
PD Power Dissipation(1) 500 mW
V(ESD) Human-Body Model (HBM) 4 kV
Charged-Device Model (CDM) 2
TJ,
Tstg		 Operating Junction,
Storage Temperature		 –55 to 150 °C
EAS Avalanche Energy, Single Pulse ID = 7.4 A,
L = 0.1 mH, RG = 25 Ω		 2.7 mJ
(1) Typical RθJA = 90°C/W on 1-in2 (6.45-cm2), 2-oz
(0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤ 300 μs, duty cycle ≤ 2%.
GUID-B8E8D42E-2D36-401B-86DB-4B3874807145-low.gif Figure 3-2 Top View