Data Sheet
30V, N-Channel NexFET™ Power MOSFETs
1 Features
- Ultralow Qg and Qgd
- Low thermal resistance
- Avalanche rated
- Pb free terminal plating
- RoHS compliant
- Halogen Free
- SON 5mm × 6mm plastic package
2 Applications
- Point-of-load synchronous buck in networking, telecom, and computing systems
- Optimized for control and synchronous FET applications
3 Description
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top ViewProduct Summary
| VDS | Drain to Source Voltage | 30 | V | |
| Qg | Gate Charge Total (4.5V) | 6.4 | nC | |
| Qgd | Gate Charge Gate to Drain | 1.9 | nC | |
| RDS(on) | Drain to Source On Resistance | VGS = 4.5V | 5.4 | mΩ |
| VGS = 10V | 4.1 | mΩ | ||
| VGS(th) | Threshold Voltage | 1.5 | V | |
Ordering Information
| Device | Package | Media | Qty | Ship |
|---|---|---|---|---|
| CSD17510Q5A | SON 5mm × 6mm Plastic Package | 13-Inch Reel | 2500 | Tape and Reel |
Absolute Maximum Ratings
| TA = 25°C unless otherwise stated | VALUE | UNIT | |
| VDS | Drain to Source Voltage | 30 | V |
| VGS | Gate to Source Voltage | ±20 | V |
| ID | Continuous Drain Current, TC = 25°C | 55 | A |
| Continuous Drain Current(1) | 20 | A | |
| IDM | Pulsed Drain Current, TA = 25°C(2) | 129 | A |
| PD | Power Dissipation(1) | 3 | W |
| TJ, TSTG | Operating Junction and Storage Temperature Range | –55 to 150 | °C |
| EAS | Avalanche Energy, single pulse ID = 54A, L = 0.1mH, RG = 25Ω |
146 | mJ |
(1) Typical RθJA = 41°C/W on 1-inch2
(6.45cm2), 2oz. (0.071mm thick) Cu pad on a 0.06-inch (1.52mm)
thick FR4 PCB.
(2) Pulse duration ≤300μs, duty cycle ≤2%
RDS(on) vs VGS
GATE CHARGE