SLPS386B September 2012 – January 2016 CSD17551Q3A
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
This 30 V, 7.8 mΩ, 3.3 mm × 3.3 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
SPACE
SPACE
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V | |
Qg | Gate Charge Total (4.5 V) | 6.0 | nC | |
Qgd | Gate Charge Gate-to-Drain | 1.5 | nC | |
RDS(on) | Drain-to-Source On Resistance | VGS = 4.5 V | 9.6 | mΩ |
VGS = 10 V | 7.8 | mΩ | ||
VGS(th) | Threshold Voltage | 1.6 | V |
DEVICE | QTY | MEDIA | PACKAGE | SHIP |
---|---|---|---|---|
CSD17551Q3A | 2500 | 13-Inch Reel | SON 3.3 mm × 3.3 mm Plastic Package |
Tape and Reel |
CSD17551Q3AT | 250 | 7-Inch Reel |
TA = 25°C unless otherwise stated | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current, TC = 25°C | 48 | A |
Continuous Drain Current, Silicon Limited | 48 | A | |
Continuous Drain Current, TA = 25°C(1) | 12 | A | |
IDM | Pulsed Drain Current, TA = 25°C(2) | 71 | A |
PD | Power Dissipation(1) | 2.6 | W |
TJ, Tstg | Operating Junction Temperature, Storage Temperature |
–55 to 150 | °C |
EAS | Avalanche Energy, single pulse ID = 25 A, L = 0.1 mH, RG = 25 Ω |
31 | mJ |
RDS(on) vs VGS |
Gate Charge |