3 Description

This 30 V, 5.5 mΩ, 3.3 mm × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	30		V
Q_g	Gate Charge Total (4.5 V)	9.0		nC
Q_gd	Gate Charge Gate-to-Drain	2.3		nC
R_DS(on)	Drain-to-Source On Resistance	V_GS = 4.5 V	6.5	mΩ
R_DS(on)	Drain-to-Source On Resistance	V_GS = 10 V	5.5	mΩ
V_GS(th)	Threshold Voltage	1.5		V

Ordering Information⁽¹⁾

DEVICE	QTY	MEDIA	PACKAGE	SHIP
CSD17552Q3A	2500	13-Inch Reel	SON 3.3 mm × 3.3 mm Plastic Package	Tape and Reel
CSD17552Q3AT	250	7-Inch Reel	SON 3.3 mm × 3.3 mm Plastic Package	Tape and Reel

(1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C unless otherwise stated		VALUE	UNIT
V_DS	Drain-to-Source Voltage	30	V
V_GS	Gate-to-Source Voltage	±20	V
I_D	Continuous Drain Current, T_C = 25°C	60	A
	Continuous Drain Current, Silicon Limited	74	A
	Continuous Drain Current, T_A = 25°C⁽¹⁾	15	A
I_DM	Pulsed Drain Current, T_A = 25°C⁽²⁾	84	A
P_D	Power Dissipation⁽¹⁾	2.6	W
T_J, T_stg	Operating Junction Temperature, Storage Temperature	–55 to 150	°C
E_AS	Avalanche Energy, single pulse I_D = 30 A, L = 0.1 mH, R_G = 25 Ω	45	mJ

(1) Typical R_θJA = 48°C/W on a 1 inch² (6.45 cm²),
2 oz. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB.

(2) Pulse duration ≤300 μs, duty cycle ≤2%

R_DS(on) vs V_GS

Gate Charge