CSD17575Q3 30-V N-Channel NexFET Power MOSFET

1 Features

Low Q_g and Q_gd
Low R_DS(on)
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 3.3 mm × 3.3 mm Plastic Package

2 Applications

Point of Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
Optimized for Synchronous FET Applications

3 Description

This 1.9 mΩ, 30 V, SON 3×3 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	30		V
Q_g	Gate Charge Total (4.5V)	23		nC
Q_gd	Gate Charge Gate-to-Drain	5.4		nC
R_DS(on)	Drain-to-Source On-Resistance	V_GS= 4.5 V	2.6	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10 V	1.9	mΩ
V_th	Threshold Voltage	1.4		V

Ordering Information⁽¹⁾

Device	Media	Qty	Package	Ship
CSD17575Q3	13-Inch Reel	2500	SON 3.3 × 3.3 mm Plastic Package	Tape and Reel
CSD17575Q3T	13-Inch Reel	250	SON 3.3 × 3.3 mm Plastic Package	Tape and Reel

For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	30	V
V_GS	Gate-to-Source Voltage	±20	V
I_D	Continuous Drain Current (Package Limit)	60	A
	Continuous Drain Current (Silicon Limit), T_C = 25°C	182
	Continuous Drain Current⁽¹⁾	27
I_DM	Pulsed Drain Current⁽²⁾	240	A
P_D	Power Dissipation⁽¹⁾	2.8	W
P_D	Power Dissipation, T_C = 25°C	108	W
T_J, T_stg	Operating Junction and Storage Temperature Range	–55 to 150	°C
E_AS	Avalanche Energy, single pulse I_D = 48, L = 0.1 mH, R_G = 25 Ω	115	mJ

Typical R_θJA = 45°C/W on 1-inch² Cu (2 oz.) on 0.060-inch thick FR4 PCB.
Max R_θJC = 1.5°C/W, pulse duration ≤100 μs, duty cycle ≤1%

R_DS(on) vs V_GS

Gate Charge

4 Revision History

Changes from * Revision (June 2014) to A Revision

Added b1, d, d1, and K dimensions to the mechanical information tableGo

5 Specifications

5.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_D = 250 μA	30			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = 24 V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = ±20 V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250 μA	1.1	1.4	1.8	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 4.5 V, I_D = 25 A		2.6	3.2	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10 V, I_D = 25 A		1.9	2.3	mΩ
g_ƒs	Transconductance	V_DS = 3 V, I_D = 25 A		118		S
DYNAMIC CHARACTERISTICS
C_ISS	Input Capacitance	V_GS = 0 V, V_DS = 15 V, ƒ = 1 MHz		3400	4420	pF
C_OSS	Output Capacitance			393	511	pF
C_RSS	Reverse Transfer Capacitance			157	204	pF
R_g	Series Gate Resistance			0.9	1.8	Ω
Q_g	Gate Charge Total (4.5 V)	V_DS = 15 V, I_D = 25 A		23	30	nC
Q_gd	Gate Charge Gate-to-Drain			5.4		nC
Q_gs	Gate Charge Gate-to-Source			8.5		nC
Q_g(th)	Gate Charge at V_th			4.6		nC
Q_OSS	Output Charge	V_DS = 15 V, V_GS = 0 V		11.6		nC
t_d(on)	Turn On Delay Time	V_DS = 15 V, V_GS = 4.5 V I_D = 25 A R_G = 2 Ω		4		ns
t_r	Rise Time			10		ns
t_d(off)	Turn Off Delay Time			20		ns
t_ƒ	Fall Time			3		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_S = 25 A, V_GS = 0 V		0.8	1	V
Q_rr	Reverse Recovery Charge	V_DD = 15 V, I_F = 25 A, di/dt = 300 A/μs		15		nC
t_rr	Reverse Recovery Time	V_DD = 15 V, I_F = 25 A, di/dt = 300 A/μs		13		ns

5.2 Thermal Information

(T_A = 25°C unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJC	Junction-to-Case Thermal Resistance⁽¹⁾			1.5	°C/W
R_θJA	Junction-to-Ambient Thermal Resistance⁽¹⁾⁽²⁾			55	°C/W

(1) R_θJC is determined with the device mounted on a 1-inch² (6.45-cm²), Cu pad on a 1.5-inches × 1.5-inches thick FR4 PCB. R_θJC is specified by design, whereas RθJA is determined by the user’s board design.

(2) Device mounted on FR4 material with 1-inch² 2-oz.Cu.