SLPS525A September 2014 – January 2016 CSD17578Q3A
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-Source Voltage | VGS = 0 V, ID = 250 μA | 30 | V | |||
IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = 24 V | 1 | μA | |||
IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250 μA | 1.1 | 1.5 | 1.9 | V | |
RDS(on) | Drain-to-Source On-Resistance |
VGS = 4.5 V, ID = 10 A | 8.2 | 9.4 | mΩ | ||
VGS = 10 V, ID = 10 A | 6.3 | 7.3 | mΩ | ||||
gfs | Transconductance | VDS = 3 V, ID = 10 A | 48 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input Capacitance | VGS = 0 V, VDS = 15 V, ƒ = 1 MHz | 1150 | 1590 | pF | ||
Coss | Output Capacitance | 134 | 174 | pF | |||
Crss | Reverse Transfer Capacitance | 56 | 73 | pF | |||
RG | Series Gate Resistance | 1.8 | 3.6 | Ω | |||
Qg | Gate Charge Total (4.5 V) | VDS = 15 V, ID = 10 A | 7.9 | 10.3 | nC | ||
Qg | Gate Charge Total (10 V) | 17.1 | 22.2 | ||||
Qgd | Gate Charge Gate-to-Drain | 1.7 | nC | ||||
Qgs | Gate Charge Gate-to-Source | 3.3 | nC | ||||
Qg(th) | Gate Charge at Vth | 1.6 | nC | ||||
Qoss | Output Charge | VDS = 15 V, VGS = 0 V | 4.2 | nC | |||
td(on) | Turn On Delay Time | VDS = 15 V, VGS = 10 V, IDS = 10 A, RG = 0 Ω |
2 | ns | |||
tr | Rise Time | 6 | ns | ||||
td(off) | Turn Off Delay Time | 13 | ns | ||||
tf | Fall Time | 1 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode Forward Voltage | ISD = 10 A, VGS = 0 V | 0.8 | 1.0 | V | ||
Qrr | Reverse Recovery Charge | VDS= 15 V, IF = 10 A, di/dt = 300 A/μs |
4.4 | nC | |||
trr | Reverse Recovery Time | 6 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-Case Thermal Resistance (1) | 4.2 | °C/W | ||
RθJA | Junction-to-Ambient Thermal Resistance(1)(2) | 60 |
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Max RθJA = 60°C/W when mounted on 1 inch2 (6.45 cm2) of 2-oz. (0.071-mm thick) Cu. |
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Max RθJA = 145°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu. |
ID = 10 A | VDS = 15 V | |
ID = 250 µA | ||
ID = 10 A | ||
Single Pulse, | ||
Max RθJC = 4.2°C/W |
VDS = 5 V | ||