3 Description

This 30-V, 22-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.

Figure 3-1 Typical Part Dimensions

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	30		V
Q_g	Gate Charge Total (4.5 V)	1.9		nC
Q_gd	Gate Charge Gate-to-Drain	0.39		nC
R_DS(on)	Drain-to-Source On Resistance	V_GS = 4.5 V	26	mΩ
R_DS(on)	Drain-to-Source On Resistance	V_GS = 10 V	22	mΩ
V_GS(th)	Threshold Voltage	1.3		V

Device Information

DEVICE⁽¹⁾	QTY	MEDIA	PACKAGE	SHIP
CSD17585F5	3000	7-Inch Reel	Femto 1.53-mm × 0.77-mm SMD Lead Less	Tape and Reel
CSD17585F5T	250	7-Inch Reel	Femto 1.53-mm × 0.77-mm SMD Lead Less	Tape and Reel

(1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	30	V
V_GS	Gate-to-Source Voltage	+20	V
I_D	Continuous Drain Current⁽¹⁾	3.6	A
I_D	Continuous Drain Current⁽²⁾	5.9	A
I_DM	Pulsed Drain Current⁽¹⁾⁽³⁾	34	A
P_D	Power Dissipation⁽¹⁾	0.5	W
P_D	Power Dissipation⁽²⁾	1.4	W
V_(ESD)	Human-Body Model (HBM)	4	kV
V_(ESD)	Charged-Device Model (CDM)	2	kV
T_J, T_stg	Operating Junction, Storage Temperature	–55 to 150	°C

(1) Min Cu, typical R_θJA = 245°C/W.

(2) Max Cu, typical R_θJA = 90°C/W.

(3) Pulse duration ≤ 100 μs, duty cycle ≤ 1%.

Figure 3-2 Top View