Refer to the PDF data sheet for device specific package drawings
This 40 V, 2.5 mΩ, SON 5 × 6 mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Device | Qty | Media | Package | Ship |
---|---|---|---|---|
CSD18501Q5A | 2500 | 13-Inch Reel | SON 5 mm × 6 mm Plastic Package | Tape and Reel |
CSD18501Q5AT | 250 | 7-Inch Reel |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 40 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package limited) | 100 | A |
Continuous Drain Current (Silicon limited), TC = 25°C | 161 | ||
Continuous Drain Current (1) | 22 | A | |
IDM | Pulsed Drain Current (2) | 400 | A |
PD | Power Dissipation(1) | 3.1 | W |
Power Dissipation, TC = 25°C | 150 | ||
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
EAS | Avalanche Energy, Single Pulse ID = 68 A, L = 0.1 mH, RG = 25 Ω |
231 | mJ |
RDS(on) vs VGS![]() |
Gate Charge![]() |
Changes from B Revision (October 2012) to C Revision
Changes from A Revision (June 2012) to B Revision
Changes from * Revision (June 2012) to A Revision
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-Case Thermal Resistance(1) | 1.0 | °C/W | ||
RθJA | Junction-to-Ambient Thermal Resistance(1)(2) | 50 |
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Max RθJA = 50°C/W when mounted on 1 inch2 (6.45-cm2) of 2-oz. (0.071-mm thick) Cu. |
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Max RθJA = 125°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu. |