SLPS367C October   2011  – March 2024 CSD18502KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
    4. 5.4 Electrostatic Discharge Caution
    5. 5.5 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Revision History

Changes from Revision B (July 2014) to Revision C (March 2024)

  • Updated the numbering format for tables, figures, and cross-references throughout the documentGo

Changes from Revision A (October 2012) to Revision B (July 2014)

  • Increased the TC = 25° continuous drain current to 212A Go
  • Increased the TC = 125° continuous drain current to 150A Go
  • Increased the pulsed drain current to 400A Go
  • Increased the max power dissipation to 259WGo
  • Increased the max operating junction and storage temperature to 175°Go
  • Updated the pulsed current conditions Go
  • Updated Figure 4-1 from a normalized RθJA to an RθJC curveGo
  • Updated Figure 4-6 to extend to 175°C Go
  • Updated Figure 4-8 to extend to 175°C Go
  • Updated the SOA in Figure 4-10 Go
  • Updated Figure 4-12 to extend to 175°C Go

Changes from Revision * (August 2012) to Revision A (October 2012)

  • Changed the Transconductance TYP value From: 149S To: 138SGo
  • Changed RθJA From: 65°C/W To: 62°C/WGo