SLPS367C October   2011  – March 2024 CSD18502KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
    4. 5.4 Electrostatic Discharge Caution
    5. 5.5 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-Source VoltageVGS = 0V, ID = 250μA40V
IDSSDrain-to-Source Leakage CurrentVGS = 0V, VDS = 32V1μA
IGSSGate-to-Source Leakage CurrentVDS = 0V, VGS = 20V100nA
VGS(th)Gate-to-Source Threshold VoltageVDS = VGS, ID = 250μA1.51.82.1V
RDS(on)Drain-to-Source On ResistanceVGS = 4.5V, ID = 100A3.34.3mΩ
VGS = 10V, ID = 100A2.42.9mΩ
gfsTransconductanceVDS = 20V, ID = 100A138S
DYNAMIC CHARACTERISTICS
CissInput CapacitanceVGS = 0V, VDS = 20V, ƒ = 1MHz39004680pF
CossOutput Capacitance9001080pF
CrssReverse Transfer Capacitance2126pF
RGSeries Gate Resistance1.22.4Ω
QgGate Charge Total (4.5 V)VDS = 20V, ID = 100A2530nC
QgGate Charge Total (10 V)5262nC
QgdGate Charge Gate-to-Drain8.4nC
QgsGate Charge Gate-to-Source10.3nC
Qg(th)Gate Charge at Vth7.5nC
QossOutput ChargeVDS = 20V, VGS = 0V52nC
td(on)Turn On Delay TimeVDS = 20V, VGS = 10V,
IDS = 100A, RG = 0Ω		11ns
trRise Time7.3ns
td(off)Turn Off Delay Time33ns
tfFall Time9.3ns
DIODE CHARACTERISTICS
VSDDiode Forward VoltageISD = 100A, VGS = 0V0.81V
QrrReverse Recovery ChargeVDS= 20V, IF = 100A,
di/dt = 300A/μs		105nC
trrReverse Recovery Time48ns