DATA SHEET
CSD18502Q5B 40 V N-Channel NexFET™ Power MOSFET
1 Features
2 Applications
- DC-DC Conversion
- Secondary Side Synchronous Rectifier
- Motor Control
3 Description
This 40-V, 1.8-mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Top View
Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain to source voltage | 40 | V | |
| Qg | Gate charge total (4.5 V) | 25 | nC | |
| Qgd | Gate charge gate to drain | 8.4 | nC | |
| RDS(on) | Drain to source on resistance | VGS = 4.5 V | 2.5 | mΩ |
| VGS = 10 V | 1.8 | mΩ | ||
| VGS(th) | Threshold voltage | 1.8 | V | |
Ordering Information(1)
| DEVICE | QTY | MEDIA | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD18502Q5B | 2500 | 13-Inch Reel | SON 5 mm × 6 mm Plastic Package | Tape and Reel |
| CSD18502Q5BT | 250 | 7-Inch Reel |
- For all available packages, see the orderable addendum at the end of the datasheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain to source voltage | 40 | V |
| VGS | Gate to source voltage | ±20 | V |
| ID | Continuous drain current (package limited) | 100 | A |
| Continuous drain current (silicon limited), TC = 25°C | 204 | ||
| Continuous drain current(1) | 26 | ||
| IDM | Pulsed drain current(2) | 400 | A |
| PD | Power dissipation(1) | 3.2 | W |
| Power dissipation, TC = 25°C | 156 | ||
| TJ | Operating junction temperature | –55 to 150 | °C |
| Tstg | Storage temperature | –55 to 150 | °C |
| EAS | Avalanche energy, single pulse ID = 88 A, L = 0.1 mH, RG = 25 Ω |
387 | mJ |
- Typical RθJA = 40°C/W on a 1 inch2 , 2 oz. Cu pad on a 0.06 inch thick FR4 PCB.
- Max RθJC = 0.8°C/W, pulse duration ≤100 μs, duty cycle ≤1%
RDS(on) vs VGS |
Gate Charge |
4 Revision History
Changes from A Revision (May 2015) to B Revision
- Added Receiving Notification of Documentation Updates section. Go
- Changed the dimension between pads 3 and 4 from 0.028 inches: to 0.050 inches in the Recommended PCB Pattern section diagram Go
Changes from * Revision (November 2012) to A Revision
- Added part number to title. Go
- Added 7-inch reel to Ordering Information. Go
- Added power dissipation at TC = 25°C to Absolute Maximum Ratings. Go
- Updated pulsed drain current conditions in Absolute Maximum Ratings. Go
- Updated Figure 1 to normalized RθJC curves. Go
- Updated SOA in Figure 10. Go
- Added Community Resources. Go
- Updated mechanical drawings to show additional dimensions. Go
5 Specifications
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain to source voltage | VGS = 0 V, ID = 250 μA | 40 | V | |||
| IDSS | Drain to source leakage current | VGS = 0 V, VDS = 32 V | 1 | μA | |||
| IGSS | Gate to source leakage current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
| VGS(th) | Gate to source threshold voltage | VDS = VGS, ID = 250 μA | 1.5 | 1.8 | 2.2 | V | |
| RDS(on) | Drain to source on resistance | VGS = 4.5 V, ID = 30 A | 2.5 | 3.3 | mΩ | ||
| VGS = 10 V, ID = 30 A | 1.8 | 2.3 | mΩ | ||||
| gfs | Transconductance | VDS = 20 V, ID = 30 A | 143 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input capacitance | VGS = 0 V, VDS = 20 V, ƒ= 1 MHz | 3900 | 5070 | pF | ||
| Coss | Output capacitance | 900 | 1170 | pF | |||
| Crss | Reverse transfer capacitance | 21 | 27 | pF | |||
| RG | Series gate resistance | 1.2 | 2.4 | Ω | |||
| Qg | Gate charge total (4.5 V) | VDS = 20 V, ID = 30 A | 25 | 33 | nC | ||
| Qg | Gate charge total (10 V) | 52 | 68 | nC | |||
| Qgd | Gate charge gate to drain | 8.4 | nC | ||||
| Qgs | Gate charge gate to source | 10.3 | nC | ||||
| Qg(th) | Gate charge at Vth | 6.9 | nC | ||||
| Qoss | Output charge | VDS = 20 V, VGS = 0 V | 59 | nC | |||
| td(on) | Turn on delay time | VDS = 20 V, VGS = 10 V, IDS = 30 A, RG = 0 Ω |
5.3 | ns | |||
| tr | Rise time | 6.8 | ns | ||||
| td(off) | Turn off delay time | 23 | ns | ||||
| tf | Fall time | 4 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode forward voltage | ISD = 30 A, VGS = 0 V | 0.8 | 1 | V | ||
| Qrr | Reverse recovery charge | VDS= 20 V, IF = 30 A, di/dt = 300 A/μs |
88 | nC | |||
| trr | Reverse recovery time | 44 | ns | ||||
5.2 Thermal Information
(TA = 25°C unless otherwise stated)| THERMAL METRIC | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|
| RθJC | Junction-to-case (top of package) thermal resistance(1) | 0.8 | °C/W | ||
| RθJA | Junction-to-ambient thermal resistance(1)(2) | 50 | °C/W | ||
(1) RθJC is determined with the device mounted on a 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch (3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
 |
Max RθJA = 50°C/W when mounted on 1 inch2 (6.45 cm2) of 2 oz. (0.071 mm thick) Cu. |
 |
Max RθJA = 125°C/W when mounted on a minimum pad area of 2 oz. (0.071 mm thick) Cu. |
5.3 Typical MOSFET Characteristics
(TA = 25°C unless otherwise stated)
| ID = 30 A | VDS = 20 V |
| ID = 250 µA |
| ID = 30 A |
| VDS = 5 V |
6 Device and Documentation Support
6.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.
6.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.
-
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
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Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.
6.3 Trademarks
NexFET, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
6.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
6.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
