3 Description

This 40V, 3.6mΩ, TO-220 NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	40		V
Q_g	Gate Charge Total (10V)	30		nC
Q_gd	Gate Charge Gate-to-Drain	4.6		nC
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 4.5V	5.4	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10V	3.6	mΩ
V_GS(th)	Threshold Voltage	1.9		V

Ordering Information ⁽¹⁾

Device	Package	Media	Qty	Ship
CSD18503KCS	TO-220 Plastic Package	Tube	50	Tube

(1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	40	V
V_GS	Gate-to-Source Voltage	±20	V
I_D	Continuous Drain Current (Package limited)	100	A
	Continuous Drain Current (Silicon limited), T_C = 25°C	142
	Continuous Drain Current (Silicon limited), T_C = 100°C	100
I_DM	Pulsed Drain Current ⁽¹⁾	358	A
P_D	Power Dissipation	188	W
T_J, T_stg	Operating Junction and Storage Temperature Range	–55 to 175	°C
E_AS	Avalanche Energy, single pulse I_D = 57A, L = 0.1mH, R_G = 25Ω	162	mJ

(1) Max R_θJC = 0.8°C/W, pulse duration ≤100μs, duty cycle ≤1%

R_DS(on) vs V_GS

Gate Charge