SLPS368B September 2012 – March 2024 CSD18503KCS
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-Source Voltage | VGS = 0V, ID = 250μA | 40 | V | |||
| IDSS | Drain-to-Source Leakage Current | VGS = 0V, VDS = 32V | 1 | μA | |||
| IGSS | Gate-to-Source Leakage Current | VDS = 0V, VGS = 20V | 100 | nA | |||
| VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250μA | 1.5 | 1.9 | 2.3 | V | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5V, ID = 75A | 5.4 | 6.8 | mΩ | ||
| VGS = 10V, ID = 75A | 3.6 | 4.5 | mΩ | ||||
| gfs | Transconductance | VDS = 20V, ID = 75A | 98 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input Capacitance | VGS = 0V, VDS = 20V, ƒ = 1MHz | 2500 | 3150 | pF | ||
| Coss | Output Capacitance | 480 | 600 | pF | |||
| Crss | Reverse Transfer Capacitance | 12 | 16 | pF | |||
| RG | Series Gate Resistance | 1.4 | 2.8 | Ω | |||
| Qg | Gate Charge Total (4.5V) | VDS = 20V, ID = 75A | 15 | 18 | nC | ||
| Qg | Gate Charge Total (10V) | 30 | 36 | nC | |||
| Qgd | Gate Charge Gate-to-Drain | 4.6 | nC | ||||
| Qgs | Gate Charge Gate-to-Source | 7.7 | nC | ||||
| Qg(th) | Gate Charge at Vth | 4.7 | nC | ||||
| Qoss | Output Charge | VDS = 20V, VGS = 0V | 30 | nC | |||
| td(on) | Turn On Delay Time | VDS =
20V, VGS = 10V, IDS = 75A, RG = 0Ω | 5.7 | ns | |||
| tr | Rise Time | 5.3 | ns | ||||
| td(off) | Turn Off Delay Time | 14 | ns | ||||
| tf | Fall Time | 6.8 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode Forward Voltage | ISD = 75A, VGS = 0V | 0.8 | 1 | V | ||
| Qrr | Reverse Recovery Charge | VDS=
20V, IF = 75A, di/dt = 300A/μs | 60 | nC | |||
| trr | Reverse Recovery Time | 37 | ns | ||||