SLPS365B October 2012 – March 2024 CSD18504KCS
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
This 40V, 5.5mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 40 | V | |
Qg | Gate Charge Total (10V) | 19 | nC | |
Qgd | Gate Charge Gate-to-Drain | 3.5 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5V | 8.0 | mΩ |
VGS = 10V | 5.5 | mΩ | ||
VGS(th) | Threshold Voltage | 1.9 | V |
Device | Package | Media | Qty | Ship |
---|---|---|---|---|
CSD18504KCS | TO-220 Plastic Package | Tube | 50 | Tube |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain to Source Voltage | 40 | V |
VGS | Gate to Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package limited), TC = 25°C | 100 | A |
Continuous Drain Current (Silicon limited), TC = 25°C | 89 | ||
Continuous Drain Current (Silicon limited), TC = 100°C | 63 | ||
IDM | Pulsed Drain Current (1) | 238 | A |
PD | Power Dissipation | 115 | W |
TJ, Tstg | Operating Junction and Storage Temperature Range | –55 to 175 | °C |
EAS | Avalanche Energy, single
pulse ID = 42A, L = 0.1mH, RG = 25Ω | 88 | mJ |
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