SLPS365B October   2012  – March 2024 CSD18504KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
    4. 5.4 Electrostatic Discharge Caution
    5. 5.5 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Description

This 40V, 5.5mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

GUID-CCD179B8-ABDA-4E7D-9D0C-08C866743E3A-low.png
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 40 V
Qg Gate Charge Total (10V) 19 nC
Qgd Gate Charge Gate-to-Drain 3.5 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5V 8.0 mΩ
VGS = 10V 5.5 mΩ
VGS(th) Threshold Voltage 1.9 V
Ordering Information(1)
DevicePackageMediaQtyShip
CSD18504KCSTO-220 Plastic PackageTube50Tube
For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°CVALUEUNIT
VDSDrain to Source Voltage40V
VGSGate to Source Voltage±20V
IDContinuous Drain Current (Package limited), TC = 25°C100A
Continuous Drain Current (Silicon limited), TC = 25°C89
Continuous Drain Current (Silicon limited), TC = 100°C63
IDMPulsed Drain Current (1)238A
PDPower Dissipation115W
TJ,
Tstg
Operating Junction and
Storage Temperature Range
–55 to 175°C
EASAvalanche Energy, single pulse
ID = 42A, L = 0.1mH, RG = 25Ω
88mJ
Max RθJC = 1.3°C/W, pulse duration ≤100μs, duty cycle ≤1%
GUID-0AB39211-3899-40DC-A3D8-0E4AA155C96B-low.gif RDS(on) vs VGS
GUID-3FB1C706-68C1-429D-A43B-991167CEB84D-low.gif Gate Charge