This 40-V, 2.1-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 40 | V | |
Qg | Gate Charge Total (10 V) | 63.9 | nC | |
Qgd | Gate Charge Gate-to-Drain | 9.7 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V | 3.2 | mΩ |
VGS = 10 V | 2.1 | |||
VGS(th) | Threshold Voltage | 1.8 | V |
DEVICE | QTY | MEDIA | PACKAGE | SHIP |
---|---|---|---|---|
CSD18511KTT | 500 | 13-Inch Reel | D2PAK Plastic Package |
Tape and Reel |
CSD18511KTTT | 50 |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 40 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package Limited) | 110 | A |
Continuous Drain Current (Silicon Limited), TC = 25°C | 194 | ||
Continuous Drain Current (Silicon Limited), TC = 100°C | 137 | ||
IDM | Pulsed Drain Current(1) | 400 | A |
PD | Power Dissipation | 188 | W |
TJ, Tstg |
Operating Junction, Storage Temperature |
–55 to 175 | °C |
EAS | Avalanche Energy, Single Pulse ID = 56 A, L = 0.1 mH, RG = 25 Ω |
156 | mJ |
RDS(on) vs VGS![]() |
Gate Charge![]() |
DATE | REVISION | NOTES |
---|---|---|
July 2017 | * | Initial release. |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-source voltage | VGS = 0 V, ID = 250 μA | 40 | V | |||
IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = 32 V | 1 | μA | |||
IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = 250 μA | 1.5 | 1.8 | 2.4 | V | |
RDS(on) | Drain-to-source on-resistance | VGS = 4.5 V, ID = 100 A | 3.2 | 4.2 | mΩ | ||
VGS = 10 V, ID = 100 A | 2.1 | 2.6 | |||||
gfs | Transconductance | VDS = 4 V, ID = 100 A | 249 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input capacitance | VGS = 0 V, VDS = 20 V, ƒ = 1 MHz | 4570 | 5940 | pF | ||
Coss | Output capacitance | 454 | 591 | pF | |||
Crss | Reverse transfer capacitance | 235 | 306 | pF | |||
RG | Series gate resistance | 0.9 | 1.8 | Ω | |||
Qg | Gate charge total (4.5 V) | VDS = 20 V, ID = 100 A | 31 | nC | |||
Qg | Gate charge total (10 V) | 64 | nC | ||||
Qgd | Gate charge gate-to-drain | 9.7 | nC | ||||
Qgs | Gate charge gate-to-source | 17.9 | nC | ||||
Qg(th) | Gate charge at Vth | 7.4 | nC | ||||
Qoss | Output charge | VDS = 20 V, VGS = 0 V | 20.7 | nC | |||
td(on) | Turnon delay time | VDS = 20 V, VGS = 10 V, IDS = 100 A, RG = 0 Ω |
8 | ns | |||
tr | Rise time | 6 | ns | ||||
td(off) | Turnoff delay time | 17 | ns | ||||
tf | Fall time | 3 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode forward voltage | ISD = 100 A, VGS = 0 V | 0.9 | 1.0 | V | ||
Qrr | Reverse recovery charge | VDS= 20 V, IF = 100 A, di/dt = 300 A/μs |
62 | nC | |||
trr | Reverse recovery time | 31 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-case thermal resistance | 0.8 | °C/W | ||
RθJA | Junction-to-ambient thermal resistance | 62 | °C/W |
VDS = 5 V | ||
VDS = 20 V | ID = 100 A | ||
ID = 250 µA | ||
ID = 100 A | ||
Single pulse, max RθJC = 0.8°C/W | ||
Max RθJC = 0.8°C/W | ||