This 40 V, 1.3 mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain to source voltage | 40 | V | |
Qg | Gate charge total (10 V) | 75 | nC | |
Qgd | Gate charge gate to drain | 13.3 | nC | |
RDS(on) | Drain to source on resistance | VGS = 4.5 V | 1.8 | mΩ |
VGS = 10 V | 1.3 | mΩ | ||
VGS(th) | Threshold voltage | 1.6 | V |
DEVICE | QTY | MEDIA | PACKAGE | SHIP |
---|---|---|---|---|
CSD18512Q5B | 2500 | 13-Inch Reel | SON 5 mm × 6 mm Plastic Package | Tape and Reel |
CSD18512Q5BT | 250 | 7-Inch Reel |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain to source voltage | 40 | V |
VGS | Gate to source voltage | ±20 | V |
ID | Continuous drain current (package limited) | 100 | A |
Continuous drain current (silicon limited),
TC = 25°C |
211 | ||
Continuous drain current(1) | 32 | ||
IDM | Pulsed drain current(2) | 400 | A |
PD | Power dissipation(1) | 3.1 | W |
Power dissipation, TC = 25°C | 139 | ||
TJ,
Tstg |
Operating Junction,
Storage Temperature |
–55 to 150 | °C |
EAS | Avalanche energy, single pulse
ID = 64 A, L = 0.1 mH, RG = 25 Ω |
205 | mJ |
RDS(on) vs VGS![]() |
Gate Charge![]() |