SLPS361C August   2012  – March 2024 CSD18532KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4.   Description
  5. 3Specifications
    1. 3.1 Electrical Characteristics
    2. 3.2 Thermal Information
    3. 3.3 Typical MOSFET Characteristics
  6. 4Device and Documentation Support
    1. 4.1 Third-Party Products Disclaimer
    2. 4.2 Receiving Notification of Documentation Updates
    3. 4.3 Support Resources
    4. 4.4 Trademarks
    5. 4.5 Electrostatic Discharge Caution
    6. 4.6 Glossary
  7. 5Revision History
  8. 6Mechanical Data

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Revision History

Changes from Revision B (August 2012) to Revision C (March 2024)

  • Updated the numbering format for tables, figures, and cross-references throughout the documentGo

Changes from Revision A (October 2012) to Revision B (July 2014)

  • Increased ID at TC = 100°C to 116AGo
  • Increased IDM to 400A Go
  • Increased PD to 250W Go
  • Increased max operating junction and storage temperature to 175°C Go
  • Updated Figure 3-1 from a normalized RθJA to an RθJC curveGo
  • Updated Figure 3-6 to extend to 175°C Go
  • Updated Figure 3-8 to extend to 175°C Go
  • Updated the SOA in Figure 3-10 Go
  • Updated Figure 3-12 to extend to 175°C Go

Changes from Revision * (August 2012) to Revision A (October 2012)

  • Changed the Transconductance TYP value From: 146S To: 187SGo
  • Changed RθJA From: MAX = 62°C/W To: MAX = 65°C/WGo
  • Changed Figure 3-2 Go