SLPS361C August   2012  – March 2024 CSD18532KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4.   Description
  5. 3Specifications
    1. 3.1 Electrical Characteristics
    2. 3.2 Thermal Information
    3. 3.3 Typical MOSFET Characteristics
  6. 4Device and Documentation Support
    1. 4.1 Third-Party Products Disclaimer
    2. 4.2 Receiving Notification of Documentation Updates
    3. 4.3 Support Resources
    4. 4.4 Trademarks
    5. 4.5 Electrostatic Discharge Caution
    6. 4.6 Glossary
  7. 5Revision History
  8. 6Mechanical Data

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-Source VoltageVGS = 0V, ID = 250μA60V
IDSSDrain-to-Source Leakage CurrentVGS = 0V, VDS = 48V1μA
IGSSGate-to-Source Leakage CurrentVDS = 0V, VGS = 20V100nA
VGS(th)Gate-to-Source Threshold VoltageVDS = VGS, ID = 250μA1.51.82.2V
RDS(on)Drain-to-Source On ResistanceVGS = 4.5V, ID = 100A4.25.3mΩ
VGS = 10V, ID = 100A3.34.2mΩ
gfsTransconductanceVDS = 30V, ID = 100A187S
DYNAMIC CHARACTERISTICS
CissInput CapacitanceVGS = 0V, VDS = 30V, ƒ = 1MHz39004680pF
CossOutput Capacitance470564pF
CrssReverse Transfer Capacitance1114pF
RGSeries Gate Resistance1.32.6Ω
QgGate Charge Total (4.5V)VDS = 30V, ID = 100A2125nC
QgGate Charge Total (10V)4453nC
QgdGate Charge Gate-to-Drain6.9nC
QgsGate Charge Gate-to-Source10nC
Qg(th)Gate Charge at Vth7.3nC
QossOutput ChargeVDS = 30V, VGS = 0V52nC
td(on)Turn On Delay TimeVDS = 30V, VGS = 10V,
IDS = 100A, RG = 0Ω		7.8ns
trRise Time5.3ns
td(off)Turn Off Delay Time24.2ns
tfFall Time5.6ns
DIODE CHARACTERISTICS
VSDDiode Forward VoltageISD = 100A, VGS = 0V0.81V
QrrReverse Recovery ChargeVDS= 30V, IF = 100A,
di/dt = 300A/μs		127nC
trrReverse Recovery Time57ns