SLPS440C June   2013  – February 2018 CSD18532NQ5B

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
    1.     Device Images
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5B Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 Q5B Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DNK|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.3 Typical MOSFET Characteristics

TA = 25°C unless otherwise stated
CSD18532NQ5B D001_SLPS440.png
CSD18532NQ5B D002_SLPS440.gif
Figure 2. Saturation Characteristics
CSD18532NQ5B D004_SLPS440.gif
ID = 25 A VDS = 30 V
Figure 4. Gate Charge
CSD18532NQ5B D006_SLPS440.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD18532NQ5B D008_SLPS440.gif
ID = 25 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD18532NQ5B D010_SLPS440.gif
Single pulse, max RθJC = 0.8°C/W
Figure 10. Maximum Safe Operating Area
CSD18532NQ5B D012_SLPS440.gif
Figure 12. Maximum Drain Current vs Temperature
CSD18532NQ5B D003_SLPS440.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD18532NQ5B D005_SLPS440_r2.gif
Figure 5. Capacitance
CSD18532NQ5B D007_SLPS440.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD18532NQ5B D009_SLPS440.gif
Figure 9. Typical Diode Forward Voltage
CSD18532NQ5B D011_SLPS440.gif
Figure 11. Single Pulse Unclamped Inductive Switching