SLPS322D November   2012  – February 2018 CSD18532Q5B

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
    1.     Top View
      1.      Device Images
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5B Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 Q5B Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DNK|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This 2.5-mΩ, 60-V SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View

CSD18532Q5B P0093-01_LPS198.gif

Product Summary

TA = 25°C TYPICAL VALUEUNIT
VDS Drain-to-Source Voltage 60 V
Qg Gate Charge Total (10 V) 44 nC
Qgd Gate Charge Gate-to-Drain 6.9 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 3.3 mΩ
VGS = 10 V 2.5
VGS(th) Threshold Voltage 1.8 V

Device Information(1)

DEVICEQTYMEDIAPACKAGESHIP
CSD18532Q5B 2500 13-Inch Reel SON
5.00-mm × 6.00-mm
Plastic Package		 Tape and Reel
CSD18532Q5BT 250 13-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUEUNIT
VDS Drain-to-Source Voltage 60 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package Limited) 100 A
Continuous Drain Current (Silicon Limited), TC = 25°C 172
Continuous Drain Current(1) 23
IDM Pulsed Drain Current(2) 400 A
PD Power Dissipation(1) 3.2 W
Power Dissipation, TC = 25°C 156
TJ, Tstg Operating Junction Temperature,
Storage Temperature		 –55 to 150 °C
EAS Avalanche Energy, Single Pulse
ID = 80 A, L = 0.1 mH, RG = 25 Ω		 320 mJ
  1. Typical RθJA = 40°C/W on a 1-in2, 2-oz Cu pad on a 0.06-in thick FR4 PCB.
  2. Max RθJC = 0.8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.