SLPS322D November   2012  – February 2018 CSD18532Q5B

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
    1.     Top View
      1.      Device Images
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5B Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 Q5B Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DNK|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.1 Electrical Characteristics

TA = 25°C unless otherwise stated
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 60 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 48 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.5 1.8 2.2 V
RDS(on) Drain-to-source on-resistance VGS = 4.5 V, ID = 25 A 3.3 4.3 mΩ
VGS = 10 V, ID = 25 A 2.5 3.2
gfs Transconductance VDS = 30 V, ID = 25 A 143 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 30 V, ƒ = 1 MHz 3900 5070 pF
Coss Output capacitance 470 611 pF
Crss Reverse transfer capacitance 13 17 pF
RG Series gate resistance 1.2 2.4 Ω
Qg Gate charge total (10 V) VDS = 30 V, ID = 25 A 44 58 nC
Qgd Gate charge gate-to-drain 6.9 nC
Qgs Gate charge gate-to-source 10 nC
Qg(th) Gate charge at Vth 6.3 nC
Qoss Output charge VDS = 30 V, VGS = 0 V 52 nC
td(on) Turnon delay time VDS = 30 V, VGS = 10 V,
IDS = 25 A, RG = 0 Ω		 5.8 ns
tr Rise time 7.2 ns
td(off) Turnoff delay time 22 ns
tf Fall time 3.1 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 25 A, VGS = 0 V 0.8 1 V
Qrr Reverse recovery charge VDS = 30 V, IF = 25 A,
di/dt = 300 A/μs		 111 nC
trr Reverse recovery time 49 ns