Refer to the PDF data sheet for device specific package drawings
This 7.6mΩ, 60V TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
![]() |
![]() |
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 60 | V | |
Qg | Gate Charge Total (10V) | 19 | nC | |
Qgd | Gate Charge Gate-to-Drain | 3.1 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5V | 10.2 | mΩ |
VGS = 10V | 7.6 | mΩ | ||
VGS(th) | Threshold Voltage | 1.9 | V |
Device | Package | Media | Qty | Ship |
---|---|---|---|---|
CSD18534KCS | TO-220 Plastic Package | Tube | 50 | Tube |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 60 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package limited) | 100 | A |
Continuous Drain Current (Silicon limited), TC = 25°C | 73 | ||
Continuous Drain Current (Silicon limited), TC = 100°C | 52 | ||
IDM | Pulsed Drain Current (1) | 164 | A |
PD | Power Dissipation | 107 | W |
TJ, Tstg | Operating Junction and Storage Temperature Range | –55 to 175 | °C |
EAS | Avalanche Energy, single
pulse ID = 38A, L = 0.1mH, RG = 25Ω | 72 | mJ |
![]() |
![]() |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-Source Voltage | VGS = 0V, ID = 250μA | 60 | V | |||
IDSS | Drain-to-Source Leakage Current | VGS = 0V, VDS = 48V | 1 | μA | |||
IGSS | Gate-to-Source Leakage Current | VDS = 0V, VGS = 20V | 100 | nA | |||
VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250μA | 1.5 | 1.9 | 2.3 | V | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5V, ID = 40A | 10.2 | 13.3 | mΩ | ||
VGS = 10V, ID = 40A | 7.6 | 9.5 | mΩ | ||||
gƒs | Transconductance | VDS = 30V, ID = 40A | 100 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input Capacitance | VGS = 0V, VDS = 30V, f = 1MHz | 1500 | 1880 | pF | ||
Coss | Output Capacitance | 164 | 205 | pF | |||
Crss | Reverse Transfer Capacitance | 5.0 | 6.5 | pF | |||
RG | Series Gate Resistance | 1.5 | 3.0 | Ω | |||
Qg | Gate Charge Total (4.5V) | VDS = 30V, ID = 40A | 9.3 | 12 | nC | ||
Qg | Gate Charge Total (10V) | 19 | 24 | nC | |||
Qgd | Gate Charge Gate-to-Drain | 3.1 | nC | ||||
Qgs | Gate Charge Gate-to-Source | 4.8 | nC | ||||
Qg(th) | Gate Charge at Vth | 3.3 | nC | ||||
Qoss | Output Charge | VDS = 30V, VGS = 0V | 18 | nC | |||
td(on) | Turn On Delay Time | VDS =
30V, VGS = 10V, IDS = 40A, RG = 0Ω | 4.2 | ns | |||
tr | Rise Time | 4.8 | ns | ||||
td(off) | Turn Off Delay Time | 10.4 | ns | ||||
tƒ | Fall Time | 2.4 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode Forward Voltage | ISD = 40A, VGS = 0V | 0.8 | 1 | V | ||
Qrr | Reverse Recovery Charge | VDS=
30V, IF = 40A, di/dt = 300A/μs | 68 | nC | |||
trr | Reverse Recovery Time | 49 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-Case Thermal Resistance | 1.3 | °C/W | ||
RθJA | Junction-to-Ambient Thermal Resistance | 62 |
TA = 25°C, unless otherwise stated