SLPS532C July   2014  – March 2024 CSD18536KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
    4. 5.4 Electrostatic Discharge Caution
    5. 5.5 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-Source VoltageVGS = 0V, ID = 250μA60V
IDSSDrain-to-Source Leakage CurrentVGS = 0V, VDS = 48V1μA
IGSSGate-to-Source Leakage CurrentVDS = 0V, VGS = 20V100nA
VGS(th)Gate-to-Source Threshold VoltageVDS = VGS, ID = 250μA1.41.82.2V
RDS(on)Drain-to-Source On-ResistanceVGS = 4.5V, ID = 100A1.72.2mΩ
VGS = 10V, ID = 100A1.31.6mΩ
gfsTransconductanceVDS = 6V, ID = 100A312S
DYNAMIC CHARACTERISTICS
CissInput CapacitanceVGS = 0V, VDS = 30V, ƒ = 1MHz879011430pF
CossOutput Capacitance14101840pF
CrssReverse Transfer Capacitance3951pF
RGSeries Gate Resistance0.71.4Ω
QgGate Charge Total (10V)VDS = 30V, ID = 100A108140nC
QgdGate Charge Gate-to-Drain14nC
QgsGate Charge Gate-to-Source18nC
Qg(th)Gate Charge at Vth17nC
QossOutput ChargeVDS = 30V, VGS = 0V230nC
td(on)Turn On Delay TimeVDS = 30V, VGS = 10 V,
IDS = 100A, RG = 0Ω		11ns
trRise Time5ns
td(off)Turn Off Delay Time24ns
tfFall Time4ns
DIODE CHARACTERISTICS
VSDDiode Forward VoltageISD = 100A, VGS = 0V0.91.0V
QrrReverse Recovery ChargeVDS= 30V, IF = 100A,
di/dt = 300A/μs		323nC
trrReverse Recovery Time86ns