SLPS532C July 2014 – March 2024 CSD18536KCS
PRODUCTION DATA
- 1
- 1Features
- 2Applications
- 3Description
- 4Specifications
- 5Device and Documentation Support
- 6Revision History
- 7Mechanical, Packaging, and Orderable Information
Package Options
Refer to the PDF data sheet for device specific package drawings
Mechanical Data (Package|Pins)
- KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information
3 Description
This 60V, 1.3mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
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Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | 60 | V | |
| Qg | Gate Charge Total (10V) | 108 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 14 | nC | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5V | 1.7 | mΩ |
| VGS = 10V | 1.3 | mΩ | ||
| VGS(th) | Threshold Voltage | 1.8 | V | |
Ordering
Information
| Device(1) | Package | Media | Qty | Ship |
|---|---|---|---|---|
| CSD18536KCS | TO-220 Plastic Package | Tube | 50 | Tube |
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 60 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID | Continuous Drain Current (Package limited) | 200 | A |
| Continuous Drain Current (Silicon limited), TC = 25°C | 349 | ||
| Continuous Drain Current (Silicon limited), TC = 100°C | 247 | ||
| IDM | Pulsed Drain Current (1) | 400 | A |
| PD | Power Dissipation | 375 | W |
| TJ, Tstg | Operating Junction and Storage Temperature Range | –55 to 175 | °C |
| EAS | Avalanche Energy, single
pulse ID = 128A, L = 0.1mH, RG = 25Ω | 819 | mJ |
(1) Max RθJC = 0.4°C/W, pulse duration ≤100μs, duty cycle ≤1%.
RDS(on) vs VGS |
Gate
Charge |