SLPS390B March 2015 – April 2024 CSD18537NKCS
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
This 11mΩ, 60V TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 60 | V | |
Qg | Gate Charge Total (10V) | 14 | nC | |
Qgd | Gate Charge Gate-to-Drain | 2.3 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 6V | 14 | mΩ |
VGS = 10V | 11 | mΩ | ||
VGS(th) | Threshold Voltage | 3 | V |
Device | Package | Media | Qty | Ship |
---|---|---|---|---|
CSD18537NKCS | TO-220 Plastic Package | Tube | 50 | Tube |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 60 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package limited) | 50 | A |
Continuous Drain Current (Silicon limited), TC = 25°C | 56 | ||
Continuous Drain Current (Silicon limited), TC = 100°C | 39 | ||
IDM | Pulsed Drain Current (1) | 127 | A |
PD | Power Dissipation | 94 | W |
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 175 | °C |
EAS | Avalanche Energy, single pulse ID = 33A, L = 0.1mH, RG = 25Ω |
55 | mJ |
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