SLPS390B March   2015  – April 2024 CSD18537NKCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Documentation Support
      1. 5.2.1 Related Documentation
    3. 5.3 Receiving Notification of Documentation Updates
    4. 5.4 Support Resources
    5. 5.5 Trademarks
    6. 5.6 Electrostatic Discharge Caution
    7. 5.7 Glossary
  7. 6Revision History
  8. 7Mechanical Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-Source VoltageVGS = 0V, ID = 250μA60V
IDSSDrain-to-Source Leakage CurrentVGS = 0V, VDS = 48V1μA
IGSSGate-to-Source Leakage CurrentVDS = 0V, VGS = 20V100nA
VGS(th)Gate-to-Source Threshold VoltageVDS = VGS, ID = 250μA2.633.5V
RDS(on)Drain-to-Source On-ResistanceVGS = 6V, ID = 25A1418mΩ
VGS = 10V, ID = 25A1114mΩ
gƒsTransconductanceVDS = 30V, ID = 25A100S
DYNAMIC CHARACTERISTICS
CissInput CapacitanceVGS = 0V, VDS = 30V, ƒ = 1MHz11401480pF
CossOutput Capacitance136177pF
CrssReverse Transfer Capacitance4.05.2pF
RGSeries Gate Resistance5.511
QgGate Charge Total (10V)VDS = 30V, ID = 25A1418nC
QgdGate Charge Gate-to-Drain2.3nC
QgsGate Charge Gate-to-Source5.2nC
Qg(th)Gate Charge at Vth3.3nC
QossOutput ChargeVDS = 30V, VGS = 0V25nC
td(on)Turn On Delay TimeVDS = 30V, VGS = 10V,
IDS = 25A, RG = 0Ω
4.5ns
trRise Time3.2ns
td(off)Turn Off Delay Time12.6ns
tƒFall Time3.9ns
DIODE CHARACTERISTICS
VSDDiode Forward VoltageISD = 25A, VGS = 0V0.91V
QrrReverse Recovery ChargeVDS= 30V, IF = 25A,
di/dt = 300A/μs
77nC
trrReverse Recovery Time50ns