3 Description

This 54-mΩ, 60-V, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many space constrained industrial load switch applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.

Typical Part Dimensions

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	60		V
Q_g	Gate Charge Total (10 V)	11		nC
Q_gd	Gate Charge Gate-to-Drain	1.6		nC
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 4.5 V	57	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10 V	54	mΩ
V_GS(th)	Threshold Voltage	1.75		V

Device Information

DEVICE	QTY	MEDIA	PACKAGE	SHIP
CSD18541F5	3000	7-Inch Reel	Femto 1.53-mm × 0.77-mm SMD Lead Less	Tape and Reel
CSD18541F5T	250	7-Inch Reel	Femto 1.53-mm × 0.77-mm SMD Lead Less	Tape and Reel

For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	60	V
V_GS	Gate-to-Source Voltage	±20	V
I_D	Continuous Drain Current	2.2	A
I_DM	Pulsed Drain Current (1)(2)	21	A
P_D	Power Dissipation	500	mW
T_J, T_stg	Operating Junction Temperature, Storage Temperature	–55 to 150	°C
E_AS	Avalanche Energy, Single Pulse I_D = 12.8 A, L = 0.1 mH, R_G = 25 Ω	8.2	mJ

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