SLPS590B March   2016  – June 2024 CSD18542KTT

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
    4. 5.4 Electrostatic Discharge Caution
    5. 5.5 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KTT|2
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0V, ID = 250μA60V
IDSSDrain-to-source leakage currentVGS = 0V, VDS = 48V1μA
IGSSGate-to-source leakage currentVDS = 0V, VGS = 20V100nA
VGS(th)Gate-to-source threshold voltageVDS = VGS, ID = 250μA1.51.82.2V
RDS(on)Drain-to-source on resistanceVGS = 4.5V, ID = 100A4.05.1mΩ
VGS = 10V, ID = 100A3.34.0
gfsTransconductanceVDS = 6V, ID = 100A198S
DYNAMIC CHARACTERISTICS
CissInput capacitanceVGS = 0V, VDS = 30V, ƒ = 1MHz39005070pF
CossOutput capacitance570740pF
CrssReverse transfer capacitance1114pF
RGSeries gate resistance1.32.6
QgGate charge total (4.5V)VDS = 30V, ID = 100A2127nC
QgGate charge total (10V)4457nC
QgdGate charge gate-to-drain6.9nC
QgsGate charge gate-to-source10nC
Qg(th)Gate charge at Vth7.3nC
QossOutput chargeVDS = 30V, VGS = 0V63nC
td(on)Turnon delay timeVDS = 30V, VGS = 10V,
IDS = 100A, RG = 0Ω
6ns
trRise time5ns
td(off)Turnoff delay time18ns
tfFall time21ns
DIODE CHARACTERISTICS
VSDDiode forward voltageISD = 100A, VGS = 0V0.91.0V
QrrReverse recovery chargeVDS= 30V, IF = 100A,
di/dt = 300A/μs
148nC
trrReverse recovery time53ns